AONS21307 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AONS21307
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 38 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 24 A
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 13.3 nS
Cossⓘ - Capacitancia de salida: 300 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
Paquete / Cubierta: DFN5X6
Búsqueda de reemplazo de AONS21307 MOSFET
AONS21307 Datasheet (PDF)
aons21307.pdf

AONS2130730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)
aons21309c.pdf

AONS21309C30V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -70A High Current Capability RDS(ON) (at VGS=-10V)
aons21357.pdf

AONS2135730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -36A High Current Capability RDS(ON) (at VGS=-10V)
aons21321.pdf

AONS2132130V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)
Otros transistores... AONE36182 , AONR21307 , AONR21357 , AONR32314 , AONR36366 , AONR36368 , AONR62818 , AONR66406 , TK10A60D , AONS21357 , AONS32306 , AONS32314 , AONS62602 , AONS62614 , AONS62618 , AONS62922 , AONS66402 .
History: SM8A01NSW | VN2460N3 | FDB86563-F085 | SHD219402 | AP4407S | AP8604CDT | AONS66612T
History: SM8A01NSW | VN2460N3 | FDB86563-F085 | SHD219402 | AP4407S | AP8604CDT | AONS66612T



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