AONS21307 Datasheet: MOSFET, P-Ch, 30V, 24A. Full specification with pinout and replacement list

AONS21307 Datasheet. Specs and Replacement

Type Designator: AONS21307

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 24 A

Electrical Characteristics

tr ⓘ - Rise Time: 13.3 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: DFN5X6

AONS21307 substitution

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AONS21307 datasheet

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AONS21307 30V P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒

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AONS21309C 30V P-Channel MOSFET General Description Product Summary VDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -70A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒

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AONS21303C 30V P-Channel MOSFET General Description Product Summary VDS -30V Latest advanced trench technology Low RDS(ON) ID (at VGS=-10V) -180A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒

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AONS21357 30V P-Channel MOSFET General Description Product Summary VDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -36A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒