All MOSFET. AONS21307 Datasheet

 

AONS21307 Datasheet and Replacement


   Type Designator: AONS21307
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   tr ⓘ - Rise Time: 13.3 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: DFN5X6
 

 AONS21307 substitution

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AONS21307 Datasheet (PDF)

 ..1. Size:336K  aosemi
 aons21307.pdf pdf_icon

AONS21307

AONS2130730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)

 6.1. Size:399K  aosemi
 aons21309c.pdf pdf_icon

AONS21307

AONS21309C30V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -70A High Current Capability RDS(ON) (at VGS=-10V)

 7.1. Size:387K  1
 aons21357.pdf pdf_icon

AONS21307

AONS2135730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -36A High Current Capability RDS(ON) (at VGS=-10V)

 7.2. Size:731K  aosemi
 aons21321.pdf pdf_icon

AONS21307

AONS2132130V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)

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Datasheet: AONE36182 , AONR21307 , AONR21357 , AONR32314 , AONR36366 , AONR36368 , AONR62818 , AONR66406 , IRF530 , AONS21357 , AONS32306 , AONS32314 , AONS62602 , AONS62614 , AONS62618 , AONS62922 , AONS66402 .

History: SQ4410EY

Keywords - AONS21307 MOSFET datasheet

 AONS21307 cross reference
 AONS21307 equivalent finder
 AONS21307 lookup
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