AONS66402 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AONS66402

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 119 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 85 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 1035 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0016 Ohm

Encapsulados: DFN5X6

 Búsqueda de reemplazo de AONS66402 MOSFET

- Selecciónⓘ de transistores por parámetros

 

AONS66402 datasheet

 ..1. Size:322K  aosemi
 aons66402.pdf pdf_icon

AONS66402

AONS66402 TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)

 0.1. Size:362K  aosemi
 aons66402t.pdf pdf_icon

AONS66402

AONS66402T TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 224A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)

 6.1. Size:427K  aosemi
 aons66407.pdf pdf_icon

AONS66402

AONS66407 TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 370A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 6.2. Size:414K  aosemi
 aons66408.pdf pdf_icon

AONS66402

AONS66408 TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Very Low RDS(ON) Excellent gate charge x RDS(ON) product (FOM) RDS(ON) (at VGS=10V)

MOSTRAR MÁS

Otros transistores... AONS21307, AONS21357, AONS32306, AONS32314, AONS62602, AONS62614, AONS62618, AONS62922, IRFP450, AONS66406, AONS66916, AOSD62666E, AOSP21307, AOSP21357, AOSP32314, AOSP32368, AOSP66406