AONS66402 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AONS66402
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 119 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 85 A
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21 nS
Cossⓘ - Capacitancia de salida: 1035 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0016 Ohm
Paquete / Cubierta: DFN5X6
Búsqueda de reemplazo de AONS66402 MOSFET
AONS66402 Datasheet (PDF)
aons66402.pdf

AONS66402TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)
aons66402t.pdf

AONS66402TTM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 224A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)
aons66407.pdf

AONS66407TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 370A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aons66408.pdf

AONS66408TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Very Low RDS(ON) Excellent gate charge x RDS(ON) product (FOM) RDS(ON) (at VGS=10V)
Otros transistores... AONS21307 , AONS21357 , AONS32306 , AONS32314 , AONS62602 , AONS62614 , AONS62618 , AONS62922 , IRF1407 , AONS66406 , AONS66916 , AOSD62666E , AOSP21307 , AOSP21357 , AOSP32314 , AOSP32368 , AOSP66406 .
History: VST012N06MS | IPZA60R045P7 | WMJ28N65F2 | 2SK2908-01L | NCE25P60K | 30N06L-TF1-T | PMV90EN
History: VST012N06MS | IPZA60R045P7 | WMJ28N65F2 | 2SK2908-01L | NCE25P60K | 30N06L-TF1-T | PMV90EN



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