AONS66402 Datasheet and Replacement
Type Designator: AONS66402
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 119 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
|Id| ⓘ - Maximum Drain Current: 85 A
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 1035 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
Package: DFN5X6
AONS66402 substitution
AONS66402 Datasheet (PDF)
aons66402.pdf

AONS66402TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)
aons66402t.pdf

AONS66402TTM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 224A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)
aons66407.pdf

AONS66407TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 370A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aons66408.pdf

AONS66408TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Very Low RDS(ON) Excellent gate charge x RDS(ON) product (FOM) RDS(ON) (at VGS=10V)
Datasheet: AONS21307 , AONS21357 , AONS32306 , AONS32314 , AONS62602 , AONS62614 , AONS62618 , AONS62922 , IRF1407 , AONS66406 , AONS66916 , AOSD62666E , AOSP21307 , AOSP21357 , AOSP32314 , AOSP32368 , AOSP66406 .
History: MCG10P03
Keywords - AONS66402 MOSFET datasheet
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AONS66402 lookup
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History: MCG10P03



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