AONS66916 Todos los transistores

 

AONS66916 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AONS66916
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 215 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 42 nS
   Cossⓘ - Capacitancia de salida: 1240 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0036 Ohm
   Paquete / Cubierta: DFN5X6
     - Selección de transistores por parámetros

 

AONS66916 Datasheet (PDF)

 ..1. Size:313K  aosemi
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AONS66916

AONS66916TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 0.1. Size:345K  aosemi
 aons66916t.pdf pdf_icon

AONS66916

AONS66916TTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 184A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 6.1. Size:340K  aosemi
 aons66917t.pdf pdf_icon

AONS66916

AONS66917TTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 185A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 6.2. Size:419K  aosemi
 aons66919.pdf pdf_icon

AONS66916

AONS66919TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

MOSTRAR MÁS

Otros transistores... AONS32306 , AONS32314 , AONS62602 , AONS62614 , AONS62618 , AONS62922 , AONS66402 , AONS66406 , P0903BDG , AOSD62666E , AOSP21307 , AOSP21357 , AOSP32314 , AOSP32368 , AOSP66406 , AOT2140L , AOT2142L .

History: 2P308G9 | SVF7N60CF | IRF7309IPBF | WM02N08FB | WFY3N02 | APT904R2AN | IRFI840G

 

 
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