AONS66916 Datasheet and Replacement
Type Designator: AONS66916
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 215 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.6 V
|Id| ⓘ - Maximum Drain Current: 100 A
tr ⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 1240 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
Package: DFN5X6
AONS66916 substitution
AONS66916 Datasheet (PDF)
aons66916.pdf

AONS66916TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aons66916t.pdf

AONS66916TTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 184A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aons66917t.pdf

AONS66917TTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 185A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aons66919.pdf

AONS66919TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
Datasheet: AONS32306 , AONS32314 , AONS62602 , AONS62614 , AONS62618 , AONS62922 , AONS66402 , AONS66406 , P60NF06 , AOSD62666E , AOSP21307 , AOSP21357 , AOSP32314 , AOSP32368 , AOSP66406 , AOT2140L , AOT2142L .
History: PJS6417
Keywords - AONS66916 MOSFET datasheet
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History: PJS6417



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