AOSP32314 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOSP32314
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 14.5 A
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7.5 nS
Cossⓘ - Capacitancia de salida: 150 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
Paquete / Cubierta: SO8
Búsqueda de reemplazo de AOSP32314 MOSFET
AOSP32314 Datasheet (PDF)
aosp32314.pdf
AOSP3231430V N-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology 30V Low RDS(ON) ID (at VGS=10V) 14.5A High Current capability RDS(ON) (at VGS=10V)
aosp32320c.pdf
AOSP32320C30V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 8.5A Low Gate Charge RDS(ON) (at VGS=10V)
aosp32368.pdf
AOSP3236830V N-Channel MOSFETGeneral Description Product SummaryVDS Low RDS(ON) 30V Optimized for Load Switch ID (at VGS=10V) 16A High Current Capability RDS(ON) (at VGS=10V)
aosp36326c.pdf
AOSP36326C30V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)
Otros transistores... AONS62618 , AONS62922 , AONS66402 , AONS66406 , AONS66916 , AOSD62666E , AOSP21307 , AOSP21357 , IRF1407 , AOSP32368 , AOSP66406 , AOT2140L , AOT2142L , AOT2146L , AOT2502L , AOT2904 , AOT2906 .
History: APT10090BLLG | TPCC8065-H | IRHMJ57260SE | BUK6D230-80E | FDD10N20LZTM | TPW60R120MFD
History: APT10090BLLG | TPCC8065-H | IRHMJ57260SE | BUK6D230-80E | FDD10N20LZTM | TPW60R120MFD
Liste
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