AOSP32314 Datasheet. Specs and Replacement

Type Designator: AOSP32314

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 14.5 A

Electrical Characteristics

tr ⓘ - Rise Time: 7.5 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: SO8

AOSP32314 substitution

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AOSP32314 datasheet

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AOSP32314

AOSP32314 30V N-Channel MOSFET General Description Product Summary VDS Latest advanced trench technology 30V Low RDS(ON) ID (at VGS=10V) 14.5A High Current capability RDS(ON) (at VGS=10V) ... See More ⇒

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AOSP32314

AOSP32320C 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 8.5A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 7.2. Size:431K  aosemi
 aosp32368.pdf pdf_icon

AOSP32314

AOSP32368 30V N-Channel MOSFET General Description Product Summary VDS Low RDS(ON) 30V Optimized for Load Switch ID (at VGS=10V) 16A High Current Capability RDS(ON) (at VGS=10V) ... See More ⇒

 9.1. Size:326K  aosemi
 aosp36326c.pdf pdf_icon

AOSP32314

AOSP36326C 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: AONS62618, AONS62922, AONS66402, AONS66406, AONS66916, AOSD62666E, AOSP21307, AOSP21357, IRF1407, AOSP32368, AOSP66406, AOT2140L, AOT2142L, AOT2146L, AOT2502L, AOT2904, AOT2906

Keywords - AOSP32314 MOSFET specs

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