All MOSFET. AOSP32314 Datasheet

 

AOSP32314 Datasheet and Replacement


   Type Designator: AOSP32314
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14.5 A
   tr ⓘ - Rise Time: 7.5 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: SO8
 

 AOSP32314 substitution

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AOSP32314 Datasheet (PDF)

 ..1. Size:319K  aosemi
 aosp32314.pdf pdf_icon

AOSP32314

AOSP3231430V N-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology 30V Low RDS(ON) ID (at VGS=10V) 14.5A High Current capability RDS(ON) (at VGS=10V)

 7.1. Size:322K  aosemi
 aosp32320c.pdf pdf_icon

AOSP32314

AOSP32320C30V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 8.5A Low Gate Charge RDS(ON) (at VGS=10V)

 7.2. Size:431K  aosemi
 aosp32368.pdf pdf_icon

AOSP32314

AOSP3236830V N-Channel MOSFETGeneral Description Product SummaryVDS Low RDS(ON) 30V Optimized for Load Switch ID (at VGS=10V) 16A High Current Capability RDS(ON) (at VGS=10V)

 9.1. Size:326K  aosemi
 aosp36326c.pdf pdf_icon

AOSP32314

AOSP36326C30V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)

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Datasheet: AONS62618 , AONS62922 , AONS66402 , AONS66406 , AONS66916 , AOSD62666E , AOSP21307 , AOSP21357 , P0903BDG , AOSP32368 , AOSP66406 , AOT2140L , AOT2142L , AOT2146L , AOT2502L , AOT2904 , AOT2906 .

History: HGB115N15S | NP82N04NLG

Keywords - AOSP32314 MOSFET datasheet

 AOSP32314 cross reference
 AOSP32314 equivalent finder
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