AOSP32314 Datasheet and Replacement
Type Designator: AOSP32314
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 14.5 A
trⓘ - Rise Time: 7.5 nS
Cossⓘ - Output Capacitance: 150 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: SO8
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AOSP32314 Datasheet (PDF)
aosp32314.pdf

AOSP3231430V N-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology 30V Low RDS(ON) ID (at VGS=10V) 14.5A High Current capability RDS(ON) (at VGS=10V)
aosp32320c.pdf

AOSP32320C30V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 8.5A Low Gate Charge RDS(ON) (at VGS=10V)
aosp32368.pdf

AOSP3236830V N-Channel MOSFETGeneral Description Product SummaryVDS Low RDS(ON) 30V Optimized for Load Switch ID (at VGS=10V) 16A High Current Capability RDS(ON) (at VGS=10V)
aosp36326c.pdf

AOSP36326C30V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: IRF3704ZPBF | 10N60K | SVF7N60CF | WSD3042DN56 | IXTB30N100L | 2SK1603 | APT904R2AN
Keywords - AOSP32314 MOSFET datasheet
AOSP32314 cross reference
AOSP32314 equivalent finder
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History: IRF3704ZPBF | 10N60K | SVF7N60CF | WSD3042DN56 | IXTB30N100L | 2SK1603 | APT904R2AN



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