All MOSFET. AOSP32314 Datasheet

 

AOSP32314 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOSP32314
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 14.5 A
   trⓘ - Rise Time: 7.5 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: SO8

 AOSP32314 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOSP32314 Datasheet (PDF)

 ..1. Size:319K  aosemi
 aosp32314.pdf

AOSP32314 AOSP32314

AOSP3231430V N-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology 30V Low RDS(ON) ID (at VGS=10V) 14.5A High Current capability RDS(ON) (at VGS=10V)

 7.1. Size:322K  aosemi
 aosp32320c.pdf

AOSP32314 AOSP32314

AOSP32320C30V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 8.5A Low Gate Charge RDS(ON) (at VGS=10V)

 7.2. Size:431K  aosemi
 aosp32368.pdf

AOSP32314 AOSP32314

AOSP3236830V N-Channel MOSFETGeneral Description Product SummaryVDS Low RDS(ON) 30V Optimized for Load Switch ID (at VGS=10V) 16A High Current Capability RDS(ON) (at VGS=10V)

 9.1. Size:326K  aosemi
 aosp36326c.pdf

AOSP32314 AOSP32314

AOSP36326C30V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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