AP95T07AGP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP95T07AGP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 170 A

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 72 nS
   Cossⓘ - Capacitancia de salida: 920 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0048 Ohm
   Paquete / Cubierta: TO220

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AP95T07AGP Datasheet (PDF)

..1. Size:192K ape
ap95t07agp.pdf

AP95T07AGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 4.8m RoHS Compliant & Halogen-Free ID3 170AGSDescriptionAP95T07A series are from Advanced Power innovated designand silicon process technology to achieve the lowest possibleon-resistance and f

0.1. Size:94K ape
ap95t07agp-hf.pdf

AP95T07AGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 4.8m RoHS Compliant & Halogen-Free ID 170AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resi

7.1. Size:57K ape
ap95t07bgp-hf.pdf

AP95T07BGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 5m RoHS Compliant & Halogen-Free ID 125AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistanc

7.2. Size:145K ape
ap95t07gs.pdf

AP95T07GSRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 75V Lower On-resistance RDS(ON) 5m Fast Switching Characteristic ID 80AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching, GDS TO-263(S)ruggedized device design,

7.3. Size:96K ape
ap95t07gp-hf.pdf

AP95T07GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 5m Fast Switching Characteristic ID 80AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedize

7.4. Size:149K ape
ap95t07bgp.pdf

AP95T07BGP-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D BVDSS 75V Simple Drive Requirement RDS(ON) 5m Lower On-resistance RoHS Compliant & Halogen-Free ID 125AGSDescriptionAP95T07B series are from Advanced Power innovated designand silicon process technology to ac

7.5. Size:159K ape
ap95t07gp.pdf

AP95T07GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 5m Fast Switching Characteristic ID 80AG RoHS Compliant & Halogen-FreeSDescriptionAP95T07 series are from Advanced Power innovated designand silicon process technology to achieve the lowest

7.6. Size:95K ape
ap95t07bgs-hf.pdf

AP95T07BGS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 5m RoHS Compliant & Halogen-Free ID 125AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design, low on-Gresis

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