All MOSFET. AP95T07AGP Datasheet

 

AP95T07AGP MOSFET. Datasheet pdf. Equivalent

Type Designator: AP95T07AGP

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 75 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 170 A

Rise Time (tr): 72 nS

Drain-Source Capacitance (Cd): 920 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0048 Ohm

Package: TO220

AP95T07AGP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP95T07AGP Datasheet (PDF)

1.1. ap95t07agp.pdf Size:192K _a-power

AP95T07AGP
AP95T07AGP

AP95T07AGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement D BVDSS 75V ▼ Lower On-resistance RDS(ON) 4.8mΩ ▼ RoHS Compliant & Halogen-Free ID3 170A G S Description AP95T07A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and f

1.2. ap95t07agp-hf.pdf Size:94K _a-power

AP95T07AGP
AP95T07AGP

AP95T07AGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 75V Ў Lower On-resistance RDS(ON) 4.8m? Ў RoHS Compliant & Halogen-Free ID 170A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance

 3.1. ap95t07bgp-hf.pdf Size:57K _a-power

AP95T07AGP
AP95T07AGP

AP95T07BGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 75V Ў Lower On-resistance RDS(ON) 5m? Ў RoHS Compliant & Halogen-Free ID 125A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and c

3.2. ap95t07gs.pdf Size:145K _a-power

AP95T07AGP
AP95T07AGP

AP95T07GS RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D ▼ Simple Drive Requirement BVDSS 75V ▼ Lower On-resistance RDS(ON) 5mΩ ▼ Fast Switching Characteristic ID 80A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D S TO-263(S) ruggedized device design,

 3.3. ap95t07bgp.pdf Size:149K _a-power

AP95T07AGP
AP95T07AGP

AP95T07BGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ D BVDSS 75V ▼ Simple Drive Requirement ▼ ▼ ▼ RDS(ON) 5mΩ ▼ Lower On-resistance ▼ ▼ ▼ RoHS Compliant & Halogen-Free ID 125A ▼ ▼ ▼ G S Description AP95T07B series are from Advanced Power innovated design and silicon process technology to ac

3.4. ap95t07bgs-hf.pdf Size:95K _a-power

AP95T07AGP
AP95T07AGP

AP95T07BGS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 75V Ў Lower On-resistance RDS(ON) 5m? Ў RoHS Compliant & Halogen-Free ID 125A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- G resistance a

 3.5. ap95t07gp.pdf Size:159K _a-power

AP95T07AGP
AP95T07AGP

AP95T07GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement D BVDSS 75V ▼ Lower On-resistance RDS(ON) 5mΩ ▼ Fast Switching Characteristic ID 80A G ▼ RoHS Compliant & Halogen-Free S Description AP95T07 series are from Advanced Power innovated design and silicon process technology to achieve the lowest

3.6. ap95t07gp-hf.pdf Size:96K _a-power

AP95T07AGP
AP95T07AGP

AP95T07GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 75V Ў Lower On-resistance RDS(ON) 5m? Ў Fast Switching Characteristic ID 80A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device

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