AP95T07AGP Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP95T07AGP
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 170 A
tr ⓘ - Время нарастания: 72 ns
Cossⓘ - Выходная емкость: 920 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0048 Ohm
Тип корпуса: TO220
Аналог (замена) для AP95T07AGP
AP95T07AGP Datasheet (PDF)
ap95t07agp.pdf

AP95T07AGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 4.8m RoHS Compliant & Halogen-Free ID3 170AGSDescriptionAP95T07A series are from Advanced Power innovated designand silicon process technology to achieve the lowest possibleon-resistance and f
ap95t07agp-hf.pdf

AP95T07AGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 4.8m RoHS Compliant & Halogen-Free ID 170AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resi
ap95t07bgp-hf.pdf

AP95T07BGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 5m RoHS Compliant & Halogen-Free ID 125AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistanc
ap95t07gs.pdf

AP95T07GSRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 75V Lower On-resistance RDS(ON) 5m Fast Switching Characteristic ID 80AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching, GDS TO-263(S)ruggedized device design,
Другие MOSFET... AP92T12GP , AP95T10GP , AP97T07GP , AP9970GW , AP75N07AGP , AP75N07GP , AP75N07GS , AP85T10GP , HY1906P , AP95T07GP , AP9970AGP , AP9581GP , AP9581GS , AP9591GP , AP9591GS , AP98T06GS , AP09N90CW .
History: 2N7002EM3T5G | 2SK4075 | H7N0603DS | AOWF11N70 | IPB65R045C7 | BL80N20L-W | UF740L-TQ2-R
History: 2N7002EM3T5G | 2SK4075 | H7N0603DS | AOWF11N70 | IPB65R045C7 | BL80N20L-W | UF740L-TQ2-R



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