AP98T03GS Todos los transistores

 

AP98T03GS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP98T03GS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 156 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 200 A

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 78 nS
   Cossⓘ - Capacitancia de salida: 1210 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm
   Paquete / Cubierta: TO263
 

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AP98T03GS Datasheet (PDF)

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 ap98t03gs.pdf pdf_icon

AP98T03GS

AP98T03GP/S-HFRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.8m Fast Switching Characteristic ID 200AGSDescriptionAP98T03 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible on-resistance

 ..2. Size:97K  ape
 ap98t03gp ap98t03gs.pdf pdf_icon

AP98T03GS

AP98T03GP/SRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.8m Fast Switching Characteristic ID 200AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design, low on-r

 6.1. Size:57K  ape
 ap98t03gw-hf.pdf pdf_icon

AP98T03GS

AP98T03GW-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Ultra-low On-resistance RDS(ON) 3m Fast Switching Characteristic ID 145AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugg

 6.2. Size:93K  ape
 ap98t03gps-hf.pdf pdf_icon

AP98T03GS

AP98T03GP/S-HFRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.8m Fast Switching Characteristic ID 200AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design, low on-

MOSTRAR MÁS

Otros transistores... AP98T06GS , AP09N90CW , AP3990R , AP16N50P , AP80T10GP , AP80T10GR , AP09N70R-A , AP3989R , IRFZ44 , AP75T10BGP , AP75T10GP , AP75T12GP , AP85T08GS , AP95T06GP , AP95T06GS , AP40T10GH , AP40T10GP .

History: TSF840MR | 2SK2084STL-E | SLH60R080SS | AP4511GM | LNC06R062 | IRFY340CM

 

 
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