AP98T03GS PDF and Equivalents Search

 

AP98T03GS Specs and Replacement

Type Designator: AP98T03GS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 200 A

Electrical Characteristics

tr ⓘ - Rise Time: 78 nS

Cossⓘ - Output Capacitance: 1210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm

Package: TO263

AP98T03GS substitution

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AP98T03GS datasheet

 ..1. Size:211K  ape
ap98t03gs.pdf pdf_icon

AP98T03GS

AP98T03GP/S-HF RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.8m Fast Switching Characteristic ID 200A G S Description AP98T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance ... See More ⇒

 ..2. Size:97K  ape
ap98t03gp ap98t03gs.pdf pdf_icon

AP98T03GS

AP98T03GP/S RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.8m Fast Switching Characteristic ID 200A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- r... See More ⇒

 6.1. Size:57K  ape
ap98t03gw-hf.pdf pdf_icon

AP98T03GS

AP98T03GW-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Ultra-low On-resistance RDS(ON) 3m Fast Switching Characteristic ID 145A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugg... See More ⇒

 6.2. Size:93K  ape
ap98t03gps-hf.pdf pdf_icon

AP98T03GS

AP98T03GP/S-HF RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.8m Fast Switching Characteristic ID 200A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-... See More ⇒

Detailed specifications: AP98T06GS, AP09N90CW, AP3990R, AP16N50P, AP80T10GP, AP80T10GR, AP09N70R-A, AP3989R, IRFZ44, AP75T10BGP, AP75T10GP, AP75T12GP, AP85T08GS, AP95T06GP, AP95T06GS, AP40T10GH, AP40T10GP

Keywords - AP98T03GS MOSFET specs

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