Справочник MOSFET. AP98T03GS

 

AP98T03GS Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AP98T03GS
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 156 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 200 A
   tr ⓘ - Время нарастания: 78 ns
   Cossⓘ - Выходная емкость: 1210 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0028 Ohm
   Тип корпуса: TO263
 

 Аналог (замена) для AP98T03GS

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP98T03GS Datasheet (PDF)

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ap98t03gs.pdfpdf_icon

AP98T03GS

AP98T03GP/S-HFRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.8m Fast Switching Characteristic ID 200AGSDescriptionAP98T03 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible on-resistance

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ap98t03gp ap98t03gs.pdfpdf_icon

AP98T03GS

AP98T03GP/SRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.8m Fast Switching Characteristic ID 200AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design, low on-r

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ap98t03gw-hf.pdfpdf_icon

AP98T03GS

AP98T03GW-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Ultra-low On-resistance RDS(ON) 3m Fast Switching Characteristic ID 145AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugg

 6.2. Size:93K  ape
ap98t03gps-hf.pdfpdf_icon

AP98T03GS

AP98T03GP/S-HFRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.8m Fast Switching Characteristic ID 200AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design, low on-

Другие MOSFET... AP98T06GS , AP09N90CW , AP3990R , AP16N50P , AP80T10GP , AP80T10GR , AP09N70R-A , AP3989R , IRFZ44 , AP75T10BGP , AP75T10GP , AP75T12GP , AP85T08GS , AP95T06GP , AP95T06GS , AP40T10GH , AP40T10GP .

History: HY75N075T | TK40F08K3 | 2SK1153

 

 
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