AP2R803GJB Todos los transistores

 

AP2R803GJB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP2R803GJB
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 104 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 80 nS
   Cossⓘ - Capacitancia de salida: 790 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm
   Paquete / Cubierta: TO251S
 

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AP2R803GJB Datasheet (PDF)

 ..1. Size:137K  ape
 ap2r803gjb.pdf pdf_icon

AP2R803GJB

AP2R803GJBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching Characteristic ID3 75AG RoHS Compliant & Halogen-FreeSDescriptionAP2R803 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p

 6.1. Size:93K  ape
 ap2r803gh.pdf pdf_icon

AP2R803GJB

AP2R803GHRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching Characteristic ID 75AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with the bestGDcombination of fast switching, ruggedized device design, low on-resista

 6.2. Size:59K  ape
 ap2r803gmt-hf.pdf pdf_icon

AP2R803GJB

AP2R803GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible RDS(ON) 3m Low On-resistance ID 105AG RoHS Compliant & Halogen-FreeSDDDDDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugged

 6.3. Size:93K  ape
 ap2r803gh-hf.pdf pdf_icon

AP2R803GJB

AP2R803GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching Characteristic ID 75AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGDbest combination of fast switching, rugg

MOSTRAR MÁS

Otros transistores... AP85T08GS , AP95T06GP , AP95T06GS , AP40T10GH , AP40T10GP , AP85T03GP , AP85T03GS , AP2761S-A , IRFP250N , AP3987P , AP9974AGH , AP9974AGP , AP9974GH , AP9974GJ , AP9974GP , AP08P20GP , AP15P10GH .

History: NVMFS6B14NL | SUU10P10-195

 

 
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