AP2R803GJB MOSFET. Datasheet pdf. Equivalent

   Type Designator: AP2R803GJB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Qgⓘ - Total Gate Charge: 28 nC
   trⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 790 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
   Package: TO251S

AP2R803GJB Transistor Equivalent Substitute - MOSFET Cross-Reference Search

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