All MOSFET. AP2R803GJB Datasheet

 

AP2R803GJB Datasheet and Replacement


   Type Designator: AP2R803GJB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 790 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
   Package: TO251S
 

 AP2R803GJB substitution

   - MOSFET ⓘ Cross-Reference Search

 

AP2R803GJB Datasheet (PDF)

 ..1. Size:137K  ape
 ap2r803gjb.pdf pdf_icon

AP2R803GJB

AP2R803GJBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching Characteristic ID3 75AG RoHS Compliant & Halogen-FreeSDescriptionAP2R803 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p

 6.1. Size:93K  ape
 ap2r803gh.pdf pdf_icon

AP2R803GJB

AP2R803GHRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching Characteristic ID 75AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with the bestGDcombination of fast switching, ruggedized device design, low on-resista

 6.2. Size:59K  ape
 ap2r803gmt-hf.pdf pdf_icon

AP2R803GJB

AP2R803GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible RDS(ON) 3m Low On-resistance ID 105AG RoHS Compliant & Halogen-FreeSDDDDDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugged

 6.3. Size:93K  ape
 ap2r803gh-hf.pdf pdf_icon

AP2R803GJB

AP2R803GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching Characteristic ID 75AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGDbest combination of fast switching, rugg

SHOW MORE

Datasheet: AP85T08GS , AP95T06GP , AP95T06GS , AP40T10GH , AP40T10GP , AP85T03GP , AP85T03GS , AP2761S-A , IRFP250N , AP3987P , AP9974AGH , AP9974AGP , AP9974GH , AP9974GJ , AP9974GP , AP08P20GP , AP15P10GH .

History: FQPF3P20 | RZQ045P01TR | PK5B9BA | MMFT60R380PCTH | SM7301DSK | H02N60SI | CEB1195

Keywords - AP2R803GJB MOSFET datasheet

 AP2R803GJB cross reference
 AP2R803GJB equivalent finder
 AP2R803GJB lookup
 AP2R803GJB substitution
 AP2R803GJB replacement

 

 
Back to Top

 


 
.