AP18N20GS Todos los transistores

 

AP18N20GS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP18N20GS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 89 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 185 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.17 Ohm
   Paquete / Cubierta: TO263
     - Selección de transistores por parámetros

 

AP18N20GS Datasheet (PDF)

 ..1. Size:172K  ape
 ap18n20gs.pdf pdf_icon

AP18N20GS

AP18N20GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS 200V Simple Drive Requirement RDS(ON) 170m Fast Switching Characteristic ID 18AG RoHS Compliant & Halogen-FreeSDescriptionAP18N20 series are from Advanced Power innovated design andsilicon process technology to achieve the lowes

 0.1. Size:102K  ape
 ap18n20gp-hf ap18n20gs-hf.pdf pdf_icon

AP18N20GS

AP18N20GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS 200V Simple Drive Requirement RDS(ON) 170m Fast Switching Characteristic ID 18AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching, GTO-22

 6.1. Size:99K  ape
 ap18n20gh-hf ap18n20gj-hf.pdf pdf_icon

AP18N20GS

AP18N20GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Low On-resistance RDS(ON) 170m Fast Switching Characteristics ID 18A RoHS Compliant & Halogen-Free GSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching, D

 6.2. Size:155K  ape
 ap18n20gi.pdf pdf_icon

AP18N20GS

AP18N20GIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS 200V Simple Drive Requirement RDS(ON) 170m Fast Switching Characteristic ID 18AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design,GDlow on-resist

MOSTRAR MÁS

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: KX10N60F | G08N06S | 2SK401 | TSM4N80CZ | R6012FNX | IRFS640B | JFFM13N65D

 

 
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