AP18N20GS MOSFET Datasheet: N-Ch, 200V, 18A. Full specification with pinout and replacement list

AP18N20GS Specs and Replacement

Type Designator: AP18N20GS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 89 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 185 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm

Package: TO263

AP18N20GS substitution

- MOSFET ⓘ Cross-Reference Search

AP18N20GS datasheet

..1. Size:172K ape
ap18n20gs.pdf pdf_icon

AP18N20GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS 200V Simple Drive Requirement RDS(ON) 170m Fast Switching Characteristic ID 18A G RoHS Compliant & Halogen-Free S Description AP18N20 series are from Advanced Power innovated design and silicon process technology to achieve the lowes... See More ⇒

0.1. Size:102K ape
ap18n20gp-hf ap18n20gs-hf.pdf pdf_icon

AP18N20GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS 200V Simple Drive Requirement RDS(ON) 170m Fast Switching Characteristic ID 18A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G TO-22... See More ⇒

6.1. Size:99K ape
ap18n20gh-hf ap18n20gj-hf.pdf pdf_icon

AP18N20GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Low On-resistance RDS(ON) 170m Fast Switching Characteristics ID 18A RoHS Compliant & Halogen-Free G S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D ... See More ⇒

6.2. Size:155K ape
ap18n20gi.pdf pdf_icon

AP18N20GI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS 200V Simple Drive Requirement RDS(ON) 170m Fast Switching Characteristic ID 18A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, G D low on-resist... See More ⇒

Detailed specifications: AP15P10GJ, AP25N10GH, AP9120GH, AP2762R-A, AP9972GH, AP15P15GH, AP20N15AGH, AP20N15GH, IRFP260, AP30P10GP, AP9468GH, AP9468GS, AP9972AGP, AP9972GP, AP9972GS, AP18T20GH, AP80N03GP