AP18N20GS Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP18N20GS
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 89 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 18 A
trⓘ - Время нарастания: 21 ns
Cossⓘ - Выходная емкость: 185 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.17 Ohm
Тип корпуса: TO263
- подбор MOSFET транзистора по параметрам
AP18N20GS Datasheet (PDF)
ap18n20gs.pdf

AP18N20GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS 200V Simple Drive Requirement RDS(ON) 170m Fast Switching Characteristic ID 18AG RoHS Compliant & Halogen-FreeSDescriptionAP18N20 series are from Advanced Power innovated design andsilicon process technology to achieve the lowes
ap18n20gp-hf ap18n20gs-hf.pdf

AP18N20GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS 200V Simple Drive Requirement RDS(ON) 170m Fast Switching Characteristic ID 18AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching, GTO-22
ap18n20gh-hf ap18n20gj-hf.pdf

AP18N20GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Low On-resistance RDS(ON) 170m Fast Switching Characteristics ID 18A RoHS Compliant & Halogen-Free GSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching, D
ap18n20gi.pdf

AP18N20GIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS 200V Simple Drive Requirement RDS(ON) 170m Fast Switching Characteristic ID 18AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design,GDlow on-resist
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: VBMB15R13 | NVMFS5C628N | FRX130H4 | NCEP026N10F | MC11N005 | SI7913DN | JCS5N50CT
History: VBMB15R13 | NVMFS5C628N | FRX130H4 | NCEP026N10F | MC11N005 | SI7913DN | JCS5N50CT



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