AP18T20GH Todos los transistores

 

AP18T20GH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP18T20GH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 13.4 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 130 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.175 Ohm

Encapsulados: TO252

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AP18T20GH datasheet

 ..1. Size:197K  ape
ap18t20gh.pdf pdf_icon

AP18T20GH

AP18T20GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 175m Fast Switching Characteristics ID 13.4A G RoHS Compliant & Halogen-Free S Description G AP18T20 series are from Advanced Power innovated design and silicon D S TO-252(H) process technolo

 0.1. Size:75K  ape
ap18t20gh-hf.pdf pdf_icon

AP18T20GH

AP18T20GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 175m Fast Switching Characteristics ID 13.4A G RoHS Compliant & Halogen-Free S Description G AP18T20 series are from Advanced Power innovated design and silicon D S TO-252(H) process technolo

 6.1. Size:75K  ape
ap18t20gi-hf.pdf pdf_icon

AP18T20GH

AP18T20GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 175m Fast Switching Characteristics ID 13.4A G RoHS Compliant & Halogen-Free S Description AP18T20 series are from Advanced Power innovated design and silicon process technology to achieve the lo

 9.1. Size:94K  ape
ap18t10gi.pdf pdf_icon

AP18T20GH

AP18T10GI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Performance BVDSS 100V D Single Drive Requirement RDS(ON) 160m Full Isolation Package ID 9A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistanc

Otros transistores... AP20N15GH , AP18N20GS , AP30P10GP , AP9468GH , AP9468GS , AP9972AGP , AP9972GP , AP9972GS , 12N60 , AP80N03GP , AP86T02GH , AP86T02GJ , AP86T02GJB , AP09N20H , AP09N20J , AP70T15GI , AP02N90P .

History: SFS12R08FNF | CJMPD11 | SFS130N06GF

 

 

 

 

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