AP18T20GH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AP18T20GH
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 83.3 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 13.4 A
Qgⓘ - Общий заряд затвора: 66 nC
trⓘ - Время нарастания: 14 ns
Cossⓘ - Выходная емкость: 130 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.175 Ohm
Тип корпуса: TO252
AP18T20GH Datasheet (PDF)
ap18t20gh.pdf
AP18T20GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 175m Fast Switching Characteristics ID 13.4AG RoHS Compliant & Halogen-FreeSDescriptionGAP18T20 series are from Advanced Power innovated design and siliconDSTO-252(H)process technolo
ap18t20gh-hf.pdf
AP18T20GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 175m Fast Switching Characteristics ID 13.4AG RoHS Compliant & Halogen-FreeSDescriptionGAP18T20 series are from Advanced Power innovated design and siliconDSTO-252(H)process technolo
ap18t20gi-hf.pdf
AP18T20GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 175m Fast Switching Characteristics ID 13.4AG RoHS Compliant & Halogen-FreeSDescriptionAP18T20 series are from Advanced Power innovated design andsilicon process technology to achieve the lo
ap18t10gi.pdf
AP18T10GIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Performance BVDSS 100VD Single Drive Requirement RDS(ON) 160m Full Isolation Package ID 9AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistanc
ap18t10gh j-hf.pdf
AP18T10GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 160m Fast Switching Characteristic ID 9AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide theGDS TO-252(H)designer with the best combinatio
ap18t10gh ap18t10gj.pdf
AP18T10GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 160m Fast Switching Characteristic ID 9AGSDescriptionGDS TO-252(H)Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device desig
ap18t10aghj-hf.pdf
AP18T10AGH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 160m Fast Switching Characteristic ID 9AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide theGDSdesigner with the best combination of fast
ap18t10agk-hf.pdf
AP18T10AGK-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 160m Fast Switching Characteristic ID 2.8AG Halogen Free & RoHS Compliant ProductSDDescriptionSAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast swit
ap18t10gp.pdf
AP18T10GPRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 160m Fast Switching Characteristic ID 9AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance
ap18t10gm-hf.pdf
AP18T10GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 160m Surface Mount Package ID 3AG Halogen Free & RoHS Compliant ProductSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918