AP18T20GH MOSFET Datasheet: N-Ch, 200V, 13.4A. Full specification with pinout and replacement list

AP18T20GH Specs and Replacement

   Type Designator: AP18T20GH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 83.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13.4 A

Electrical Characteristics

   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.175 Ohm
   Package: TO252

AP18T20GH substitution

- MOSFET ⓘ Cross-Reference Search

AP18T20GH datasheet

..1. Size:197K ape
ap18t20gh.pdf pdf_icon

AP18T20GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 175m Fast Switching Characteristics ID 13.4A G RoHS Compliant & Halogen-Free S Description G AP18T20 series are from Advanced Power innovated design and silicon D S TO-252(H) process technolo... See More ⇒

0.1. Size:75K ape
ap18t20gh-hf.pdf pdf_icon

6.1. Size:75K ape
ap18t20gi-hf.pdf pdf_icon

AP18T20GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 175m Fast Switching Characteristics ID 13.4A G RoHS Compliant & Halogen-Free S Description AP18T20 series are from Advanced Power innovated design and silicon process technology to achieve the lo... See More ⇒

9.1. Size:94K ape
ap18t10gi.pdf pdf_icon

AP18T10GI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Performance BVDSS 100V D Single Drive Requirement RDS(ON) 160m Full Isolation Package ID 9A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistanc... See More ⇒