AP80N03GP Todos los transistores

 

AP80N03GP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP80N03GP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 100 nS
   Cossⓘ - Capacitancia de salida: 895 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: TO220
 

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AP80N03GP Datasheet (PDF)

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AP80N03GP

AP80N03GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 30VD Fast Switching Characteristic RDS(ON) 8m Simple Drive Requirement ID 80AG RoHS Compliant & Halogen-FreeSDescriptionAP80N03 series are from Advanced Power innovated design and siliconGprocess technology to achieve the low

 7.1. Size:1838K  cn apm
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AP80N03GP

AP80N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP80N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80A DS DR

 7.2. Size:1216K  cn apm
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AP80N03GP

AP80N03D 30V N-Channel Enhancement Mode MOSFET Description The AP80N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80 A DS DR

 7.3. Size:1583K  cn apm
ap80n03nf.pdf pdf_icon

AP80N03GP

AP80N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP80N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80A DS DR

Otros transistores... AP18N20GS , AP30P10GP , AP9468GH , AP9468GS , AP9972AGP , AP9972GP , AP9972GS , AP18T20GH , 5N65 , AP86T02GH , AP86T02GJ , AP86T02GJB , AP09N20H , AP09N20J , AP70T15GI , AP02N90P , AP72T02GH .

History: STLT19 | FDP150N10 | SGO4606T

 

 
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History: STLT19 | FDP150N10 | SGO4606T

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