All MOSFET. AP80N03GP Datasheet

 

AP80N03GP Datasheet and Replacement


   Type Designator: AP80N03GP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 895 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO220
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AP80N03GP Datasheet (PDF)

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AP80N03GP

AP80N03GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 30VD Fast Switching Characteristic RDS(ON) 8m Simple Drive Requirement ID 80AG RoHS Compliant & Halogen-FreeSDescriptionAP80N03 series are from Advanced Power innovated design and siliconGprocess technology to achieve the low

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AP80N03GP

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AP80N03GP

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AP80N03GP

AP80N30WRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 300V Lower On-resistance RDS(ON) 66m High Speed Switching ID 36AGSDescriptionAP80N30 from APEC provide the designer with the best combination offast switching, low on-resistance and cost-effectiveness.GThe TO-3P package is

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History: VBNC1303 | IRFS4010PBF

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