AP80N03GP Datasheet and Replacement
Type Designator: AP80N03GP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 83.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 895 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO220
AP80N03GP substitution
AP80N03GP Datasheet (PDF)
ap80n03gp.pdf

AP80N03GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 30VD Fast Switching Characteristic RDS(ON) 8m Simple Drive Requirement ID 80AG RoHS Compliant & Halogen-FreeSDescriptionAP80N03 series are from Advanced Power innovated design and siliconGprocess technology to achieve the low
ap80n30w.pdf

AP80N30WRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 300V Lower On-resistance RDS(ON) 66m High Speed Switching ID 36AGSDescriptionAP80N30 from APEC provide the designer with the best combination offast switching, low on-resistance and cost-effectiveness.GThe TO-3P package is
Datasheet: AP18N20GS , AP30P10GP , AP9468GH , AP9468GS , AP9972AGP , AP9972GP , AP9972GS , AP18T20GH , 4435 , AP86T02GH , AP86T02GJ , AP86T02GJB , AP09N20H , AP09N20J , AP70T15GI , AP02N90P , AP72T02GH .
History: QM3004U1 | SI7108DN | GSM8412 | HCFL80R380 | NTMFS4836NT1G | IRF6603 | ST2305A
Keywords - AP80N03GP MOSFET datasheet
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History: QM3004U1 | SI7108DN | GSM8412 | HCFL80R380 | NTMFS4836NT1G | IRF6603 | ST2305A



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