AP80N03GP PDF and Equivalents Search

 

AP80N03GP Specs and Replacement

Type Designator: AP80N03GP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 895 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO220

AP80N03GP substitution

- MOSFET ⓘ Cross-Reference Search

 

AP80N03GP datasheet

 ..1. Size:175K  ape
ap80n03gp.pdf pdf_icon

AP80N03GP

AP80N03GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 30V D Fast Switching Characteristic RDS(ON) 8m Simple Drive Requirement ID 80A G RoHS Compliant & Halogen-Free S Description AP80N03 series are from Advanced Power innovated design and silicon G process technology to achieve the low... See More ⇒

 7.1. Size:1838K  cn apm
ap80n03df.pdf pdf_icon

AP80N03GP

AP80N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP80N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80A DS D R ... See More ⇒

 7.2. Size:1216K  cn apm
ap80n03d.pdf pdf_icon

AP80N03GP

AP80N03D 30V N-Channel Enhancement Mode MOSFET Description The AP80N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80 A DS D R ... See More ⇒

 7.3. Size:1583K  cn apm
ap80n03nf.pdf pdf_icon

AP80N03GP

AP80N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP80N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80A DS D R ... See More ⇒

Detailed specifications: AP18N20GS, AP30P10GP, AP9468GH, AP9468GS, AP9972AGP, AP9972GP, AP9972GS, AP18T20GH, 5N65, AP86T02GH, AP86T02GJ, AP86T02GJB, AP09N20H, AP09N20J, AP70T15GI, AP02N90P, AP72T02GH

Keywords - AP80N03GP MOSFET specs

 AP80N03GP cross reference

 AP80N03GP equivalent finder

 AP80N03GP pdf lookup

 AP80N03GP substitution

 AP80N03GP replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 

 

↑ Back to Top
.