AP80N03GP - описание и поиск аналогов

 

AP80N03GP. Аналоги и основные параметры

Наименование производителя: AP80N03GP

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 83.3 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A

Электрические характеристики

tr ⓘ - Время нарастания: 100 ns

Cossⓘ - Выходная емкость: 895 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm

Тип корпуса: TO220

Аналог (замена) для AP80N03GP

- подборⓘ MOSFET транзистора по параметрам

 

AP80N03GP даташит

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ap80n03gp.pdfpdf_icon

AP80N03GP

AP80N03GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 30V D Fast Switching Characteristic RDS(ON) 8m Simple Drive Requirement ID 80A G RoHS Compliant & Halogen-Free S Description AP80N03 series are from Advanced Power innovated design and silicon G process technology to achieve the low

 7.1. Size:1838K  cn apm
ap80n03df.pdfpdf_icon

AP80N03GP

AP80N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP80N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80A DS D R

 7.2. Size:1216K  cn apm
ap80n03d.pdfpdf_icon

AP80N03GP

AP80N03D 30V N-Channel Enhancement Mode MOSFET Description The AP80N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80 A DS D R

 7.3. Size:1583K  cn apm
ap80n03nf.pdfpdf_icon

AP80N03GP

AP80N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP80N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80A DS D R

Другие MOSFET... AP18N20GS , AP30P10GP , AP9468GH , AP9468GS , AP9972AGP , AP9972GP , AP9972GS , AP18T20GH , 5N65 , AP86T02GH , AP86T02GJ , AP86T02GJB , AP09N20H , AP09N20J , AP70T15GI , AP02N90P , AP72T02GH .

History: AP3N3R3M

 

 

 

 

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