AP86T02GJB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP86T02GJB
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 75 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 105 nS
Cossⓘ - Capacitancia de salida: 490 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
Paquete / Cubierta: TO251S
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AP86T02GJB Datasheet (PDF)
ap86t02gjb.pdf

AP86T02GJBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 25V Low On-resistance RDS(ON) 6m Fast Switching Characteristic ID 75AG RoHS Compliant & Halogen-FreeSDescriptionAP86T02 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest poss
ap86t02gj.pdf

AP86T02GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 25V Low On-resistance RDS(ON) 6m Fast Switching Characteristic ID 75AG RoHS CompliantSDescriptionGAP86T02 series are from Advanced Power innovated design and silicon DSTO-252(H)process technology to achieve the low
ap86t02gh j-hf.pdf

AP86T02GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 25VD Low On-resistance RDS(ON) 6m Fast Switching Characteristic ID 75AG RoHS CompliantSDescriptionGDSTO-252(H)The TO-252 package is widely preferred for commercial-industrialsurface mount applications and suited
ap86t02gh.pdf

AP86T02GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 25V Low On-resistance RDS(ON) 6m Fast Switching Characteristic ID 75AG RoHS CompliantSDescriptionGAP86T02 series are from Advanced Power innovated design and silicon DSTO-252(H)process technology to achieve the low
Otros transistores... AP9468GS , AP9972AGP , AP9972GP , AP9972GS , AP18T20GH , AP80N03GP , AP86T02GH , AP86T02GJ , IRLZ44N , AP09N20H , AP09N20J , AP70T15GI , AP02N90P , AP72T02GH , AP83T03GJ , AP95T10GI , AP04N60J .
History: SI7100DN | IRF6617 | DH012N03E | STF45N65M5 | P5506NK | SWMN15N50D | QM3024D
History: SI7100DN | IRF6617 | DH012N03E | STF45N65M5 | P5506NK | SWMN15N50D | QM3024D



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