AP86T02GJB Todos los transistores

 

AP86T02GJB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP86T02GJB
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 105 nS
   Cossⓘ - Capacitancia de salida: 490 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
   Paquete / Cubierta: TO251S
 

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AP86T02GJB Datasheet (PDF)

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 ap86t02gjb.pdf pdf_icon

AP86T02GJB

AP86T02GJBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 25V Low On-resistance RDS(ON) 6m Fast Switching Characteristic ID 75AG RoHS Compliant & Halogen-FreeSDescriptionAP86T02 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest poss

 5.1. Size:186K  ape
 ap86t02gj.pdf pdf_icon

AP86T02GJB

AP86T02GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 25V Low On-resistance RDS(ON) 6m Fast Switching Characteristic ID 75AG RoHS CompliantSDescriptionGAP86T02 series are from Advanced Power innovated design and silicon DSTO-252(H)process technology to achieve the low

 6.1. Size:264K  ape
 ap86t02gh j-hf.pdf pdf_icon

AP86T02GJB

AP86T02GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 25VD Low On-resistance RDS(ON) 6m Fast Switching Characteristic ID 75AG RoHS CompliantSDescriptionGDSTO-252(H)The TO-252 package is widely preferred for commercial-industrialsurface mount applications and suited

 6.2. Size:235K  ape
 ap86t02gh.pdf pdf_icon

AP86T02GJB

AP86T02GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 25V Low On-resistance RDS(ON) 6m Fast Switching Characteristic ID 75AG RoHS CompliantSDescriptionGAP86T02 series are from Advanced Power innovated design and silicon DSTO-252(H)process technology to achieve the low

MOSTRAR MÁS

Otros transistores... AP9468GS , AP9972AGP , AP9972GP , AP9972GS , AP18T20GH , AP80N03GP , AP86T02GH , AP86T02GJ , IRLZ44N , AP09N20H , AP09N20J , AP70T15GI , AP02N90P , AP72T02GH , AP83T03GJ , AP95T10GI , AP04N60J .

 

 
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