AP86T02GJB MOSFET Datasheet: N-Ch, 25V, 75A. Full specification with pinout and replacement list

AP86T02GJB Specs and Replacement

Type Designator: AP86T02GJB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Electrical Characteristics

tr ⓘ - Rise Time: 105 nS

Cossⓘ - Output Capacitance: 490 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO251S

AP86T02GJB substitution

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AP86T02GJB datasheet

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AP86T02GJB Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 25V Low On-resistance RDS(ON) 6m Fast Switching Characteristic ID 75A G RoHS Compliant & Halogen-Free S Description AP86T02 series are from Advanced Power innovated design and silicon process technology to achieve the lowest poss... See More ⇒

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AP86T02GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 25V Low On-resistance RDS(ON) 6m Fast Switching Characteristic ID 75A G RoHS Compliant S Description G AP86T02 series are from Advanced Power innovated design and silicon D S TO-252(H) process technology to achieve the low... See More ⇒

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AP86T02GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 25V D Low On-resistance RDS(ON) 6m Fast Switching Characteristic ID 75A G RoHS Compliant S Description G D S TO-252(H) The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited ... See More ⇒

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