AP9561GJ Todos los transistores

 

AP9561GJ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9561GJ

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 54.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 45 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 46 nS

Cossⓘ - Capacitancia de salida: 360 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm

Encapsulados: TO251

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AP9561GJ datasheet

 ..1. Size:201K  ape
 ap9561gj.pdf pdf_icon

AP9561GJ

AP9561GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45A G RoHS Compliant & Halogen-Free S Description AP9561 series are from Advanced Power innovated design and silicon G D process technology to achieve th

 0.1. Size:96K  ape
 ap9561gh-hf ap9561gj-hf.pdf pdf_icon

AP9561GJ

AP9561GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching,

 7.1. Size:93K  ape
 ap9561gp-hf.pdf pdf_icon

AP9561GJ

AP9561GP-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device des

 7.2. Size:93K  ape
 ap9561gm-hf.pdf pdf_icon

AP9561GJ

AP9561GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40V D D D Lower Gate Charge RDS(ON) 18m D Fast Switching Characteristic ID -9.4A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of

MOSTRAR MÁS

Otros transistores... AP03N70J , AP3P9R0H , AP3P9R0J , AP3P9R0JB , AP3P9R0P , AP6679BGH , AP6679BGJ , AP6679BGJB , 18N50 , AP70T03GJ , AP70T03GJB , AP16N50I , AP0904GH , AP0904GJB , AP75T10GI , AP60T03GH , AP01N60J .

History: AP2308GEN | AP16N50W-HF | AP9936GM

 

 

 

 

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