AP9561GJ Todos los transistores

 

AP9561GJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP9561GJ
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 54.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 45 A

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 46 nS
   Cossⓘ - Capacitancia de salida: 360 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: TO251
 

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AP9561GJ Datasheet (PDF)

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 ap9561gj.pdf pdf_icon

AP9561GJ

AP9561GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45AG RoHS Compliant & Halogen-FreeSDescriptionAP9561 series are from Advanced Power innovated design and siliconGDprocess technology to achieve th

 0.1. Size:96K  ape
 ap9561gh-hf ap9561gj-hf.pdf pdf_icon

AP9561GJ

AP9561GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,

 7.1. Size:93K  ape
 ap9561gp-hf.pdf pdf_icon

AP9561GJ

AP9561GP-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device des

 7.2. Size:93K  ape
 ap9561gm-hf.pdf pdf_icon

AP9561GJ

AP9561GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VDDD Lower Gate Charge RDS(ON) 18mD Fast Switching Characteristic ID -9.4AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of

MOSTRAR MÁS

Otros transistores... AP03N70J , AP3P9R0H , AP3P9R0J , AP3P9R0JB , AP3P9R0P , AP6679BGH , AP6679BGJ , AP6679BGJB , 75N75 , AP70T03GJ , AP70T03GJB , AP16N50I , AP0904GH , AP0904GJB , AP75T10GI , AP60T03GH , AP01N60J .

History: IRLR7821PBF | NP36N055SLE | AP6679BGJ | QM3002M3 | AFN4634WS | SSF6014A | WMK38N60C2

 

 
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