AP9561GJ PDF and Equivalents Search

 

AP9561GJ Specs and Replacement

Type Designator: AP9561GJ

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 54.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 45 A

Electrical Characteristics

tr ⓘ - Rise Time: 46 nS

Cossⓘ - Output Capacitance: 360 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TO251

AP9561GJ substitution

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AP9561GJ datasheet

 ..1. Size:201K  ape
 ap9561gj.pdf pdf_icon

AP9561GJ

AP9561GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45A G RoHS Compliant & Halogen-Free S Description AP9561 series are from Advanced Power innovated design and silicon G D process technology to achieve th... See More ⇒

 0.1. Size:96K  ape
 ap9561gh-hf ap9561gj-hf.pdf pdf_icon

AP9561GJ

AP9561GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching,... See More ⇒

 7.1. Size:93K  ape
 ap9561gp-hf.pdf pdf_icon

AP9561GJ

AP9561GP-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device des... See More ⇒

 7.2. Size:93K  ape
 ap9561gm-hf.pdf pdf_icon

AP9561GJ

AP9561GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40V D D D Lower Gate Charge RDS(ON) 18m D Fast Switching Characteristic ID -9.4A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of ... See More ⇒

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Detailed specifications: AP03N70J, AP3P9R0H, AP3P9R0J, AP3P9R0JB, AP3P9R0P, AP6679BGH, AP6679BGJ, AP6679BGJB, 18N50, AP70T03GJ, AP70T03GJB, AP16N50I, AP0904GH, AP0904GJB, AP75T10GI, AP60T03GH, AP01N60J

Keywords - AP9561GJ MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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