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AP9561GJ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP9561GJ
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 54.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 45 A
   trⓘ - Время нарастания: 46 ns
   Cossⓘ - Выходная емкость: 360 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
   Тип корпуса: TO251

 Аналог (замена) для AP9561GJ

 

 

AP9561GJ Datasheet (PDF)

 ..1. Size:201K  ape
 ap9561gj.pdf

AP9561GJ AP9561GJ

AP9561GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45AG RoHS Compliant & Halogen-FreeSDescriptionAP9561 series are from Advanced Power innovated design and siliconGDprocess technology to achieve th

 0.1. Size:96K  ape
 ap9561gh-hf ap9561gj-hf.pdf

AP9561GJ AP9561GJ

AP9561GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,

 7.1. Size:93K  ape
 ap9561gp-hf.pdf

AP9561GJ AP9561GJ

AP9561GP-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device des

 7.2. Size:93K  ape
 ap9561gm-hf.pdf

AP9561GJ AP9561GJ

AP9561GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VDDD Lower Gate Charge RDS(ON) 18mD Fast Switching Characteristic ID -9.4AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of

 7.3. Size:216K  ape
 ap9561gm.pdf

AP9561GJ AP9561GJ

AP9561GMRoHS-compliat ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VDDD Lower Gate Charge RDS(ON) 18mD Fast Switching Characteristic ID -9.4AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device des

 7.4. Size:93K  ape
 ap9561gi-hf.pdf

AP9561GJ AP9561GJ

AP9561GI-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -36AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggediz

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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