AP40T10GI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP40T10GI
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 37.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 40 A
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 64 nS
Cossⓘ - Capacitancia de salida: 270 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.036 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de AP40T10GI MOSFET
AP40T10GI Datasheet (PDF)
ap40t10gi.pdf

AP40T10GI-HFRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 100V Simple Drive Requirement RDS(ON) 36m Fast Switching Characteristic ID3 40AGSDescriptionAP40T10 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-GDresistance
ap40t10gi-hf.pdf

AP40T10GI-HFRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 100V Single Drive Requirement RDS(ON) 36m Fast Switching Characteristic ID 40AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design, low on-GD
ap40t10gh-hf.pdf

AP40T10GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 100VD Single Drive Requirement RDS(ON) 35m Fast Switching Characteristic ID 39AG RoHS CompliantSDescriptionGDAdvanced Power MOSFETs from APEC provide the designer withSTO-252(H)the best combination of fast switching, ru
ap40t10gr.pdf

AP40T10GRRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 100VD Single Drive Requirement RDS(ON) 35m Fast Switching Characteristic ID 40AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resist
Otros transistores... AP0904GJB , AP75T10GI , AP60T03GH , AP01N60J , AP9563GH , AP9563GJ , AP9971GP , AP9971GS , NCEP15T14 , AP2764AI-A , AP20N15GI , AP9567GH , AP9987GH , AP9987GJ , AP9987GJV , AP9997AGH , AP4407I .
History: FHU70N03A | S-LP2307LT1G | HGW059N12S | PMPB47XP | STY112N65M5 | MPSY65M170 | PMG85XP
History: FHU70N03A | S-LP2307LT1G | HGW059N12S | PMPB47XP | STY112N65M5 | MPSY65M170 | PMG85XP



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