AP40T10GI PDF and Equivalents Search

 

AP40T10GI Specs and Replacement

Type Designator: AP40T10GI

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Electrical Characteristics

tr ⓘ - Rise Time: 64 nS

Cossⓘ - Output Capacitance: 270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm

Package: TO220F

AP40T10GI substitution

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AP40T10GI datasheet

 ..1. Size:212K  ape
ap40t10gi.pdf pdf_icon

AP40T10GI

AP40T10GI-HF RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 100V Simple Drive Requirement RDS(ON) 36m Fast Switching Characteristic ID3 40A G S Description AP40T10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- G D resistance... See More ⇒

 0.1. Size:94K  ape
ap40t10gi-hf.pdf pdf_icon

AP40T10GI

AP40T10GI-HF RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 100V Single Drive Requirement RDS(ON) 36m Fast Switching Characteristic ID 40A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- G D ... See More ⇒

 6.1. Size:55K  ape
ap40t10gh-hf.pdf pdf_icon

AP40T10GI

AP40T10GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 100V D Single Drive Requirement RDS(ON) 35m Fast Switching Characteristic ID 39A G RoHS Compliant S Description G D Advanced Power MOSFETs from APEC provide the designer with S TO-252(H) the best combination of fast switching, ru... See More ⇒

 6.2. Size:93K  ape
ap40t10gr.pdf pdf_icon

AP40T10GI

AP40T10GR RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 100V D Single Drive Requirement RDS(ON) 35m Fast Switching Characteristic ID 40A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-resist... See More ⇒

Detailed specifications: AP0904GJB, AP75T10GI, AP60T03GH, AP01N60J, AP9563GH, AP9563GJ, AP9971GP, AP9971GS, IRF1405, AP2764AI-A, AP20N15GI, AP9567GH, AP9987GH, AP9987GJ, AP9987GJV, AP9997AGH, AP4407I

Keywords - AP40T10GI MOSFET specs

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