AP01L60J Todos los transistores

 

AP01L60J MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP01L60J

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 29 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 1 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 30.7 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 12 Ohm

Encapsulados: TO251

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AP01L60J datasheet

 ..1. Size:202K  ape
ap01l60j.pdf pdf_icon

AP01L60J

AP01L60H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Characteristics RDS(ON) 12 Simple Drive Requirement ID 1A G RoHS Compliant & Halogen-Free S Description The TO-252 package is widely preferred for commercial-industrial G surface mount applications and suited

 0.1. Size:62K  ape
ap01l60h-a-hf ap01l60j-a-hf.pdf pdf_icon

AP01L60J

AP01L60H/J-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Rated BVDSS 650V D Fast Switching Speed RDS(ON) 12 Simple Drive Requirement ID 1A G RoHS Compliant & Halogen-Free S Description The TO-252 package is widely preferred for commercial-industrial G surface mount applications and suited for AC/

 0.2. Size:62K  ape
ap01l60h-h ap01l60j-h.pdf pdf_icon

AP01L60J

AP01L60H/J-H RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Rated BVDSS 700V D Fast Switching Speed RDS(ON) 12 Simple Drive Requirement ID 1A G S Description The TO-252 package is universally preferred for all commercial-industrial G surface mount applications and suited for AC/DC converters. The D S TO

 7.1. Size:86K  ape
ap01l60t-h-hf.pdf pdf_icon

AP01L60J

AP01L60T-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 700V D Fast Switching Characteristics RDS(ON) 13.5 Simple Drive Requirement ID 160mA G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistan

Otros transistores... AP02N40H , AP04N70BI-H , AP2762IN-A , AP3990I , AP40P03GI , AP9971GI , AP9972GI , AP01L60H , AO4468 , AP03N70I , AP9578GH , AP9870GH , AP9962AGP , AP9973GH , AP9973GJ , AP15N03GH , AP03N90I .

History: AP9962AGM | AP13P15GS | STF13NM60ND | AP15TP1R0M

 

 

 

 

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