AP01L60J Todos los transistores

 

AP01L60J MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP01L60J
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 29 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 1 A

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 30.7 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 12 Ohm
   Paquete / Cubierta: TO251
 

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AP01L60J Datasheet (PDF)

 ..1. Size:202K  ape
 ap01l60j.pdf pdf_icon

AP01L60J

AP01L60H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristics RDS(ON) 12 Simple Drive Requirement ID 1AG RoHS Compliant & Halogen-FreeSDescriptionThe TO-252 package is widely preferred for commercial-industrialGsurface mount applications and suited

 0.1. Size:62K  ape
 ap01l60h-a-hf ap01l60j-a-hf.pdf pdf_icon

AP01L60J

AP01L60H/J-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Rated BVDSS 650VD Fast Switching Speed RDS(ON) 12 Simple Drive Requirement ID 1AG RoHS Compliant & Halogen-FreeSDescriptionThe TO-252 package is widely preferred for commercial-industrialGsurface mount applications and suited for AC/

 0.2. Size:62K  ape
 ap01l60h-h ap01l60j-h.pdf pdf_icon

AP01L60J

AP01L60H/J-HRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Rated BVDSS 700VD Fast Switching Speed RDS(ON) 12 Simple Drive Requirement ID 1AGSDescriptionThe TO-252 package is universally preferred for all commercial-industrialGsurface mount applications and suited for AC/DC converters. The DSTO

 7.1. Size:86K  ape
 ap01l60t-h-hf.pdf pdf_icon

AP01L60J

AP01L60T-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 700VD Fast Switching Characteristics RDS(ON) 13.5 Simple Drive Requirement ID 160mAG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistan

MOSTRAR MÁS

Otros transistores... AP02N40H , AP04N70BI-H , AP2762IN-A , AP3990I , AP40P03GI , AP9971GI , AP9972GI , AP01L60H , IRFP064N , AP03N70I , AP9578GH , AP9870GH , AP9962AGP , AP9973GH , AP9973GJ , AP15N03GH , AP03N90I .

History: IPS0151S | SQP120N10-09 | IRFL4310TR

 

 
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