AP01L60J MOSFET Datasheet: N-Ch, 600V, 1A. Full specification with pinout and replacement list

AP01L60J Specs and Replacement

Type Designator: AP01L60J

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 29 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1 A

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 30.7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm

Package: TO251

AP01L60J substitution

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AP01L60J datasheet

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AP01L60H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Characteristics RDS(ON) 12 Simple Drive Requirement ID 1A G RoHS Compliant & Halogen-Free S Description The TO-252 package is widely preferred for commercial-industrial G surface mount applications and suited ... See More ⇒

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AP01L60H/J-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Rated BVDSS 650V D Fast Switching Speed RDS(ON) 12 Simple Drive Requirement ID 1A G RoHS Compliant & Halogen-Free S Description The TO-252 package is widely preferred for commercial-industrial G surface mount applications and suited for AC/... See More ⇒

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AP01L60H/J-H RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Rated BVDSS 700V D Fast Switching Speed RDS(ON) 12 Simple Drive Requirement ID 1A G S Description The TO-252 package is universally preferred for all commercial-industrial G surface mount applications and suited for AC/DC converters. The D S TO... See More ⇒

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AP01L60T-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 700V D Fast Switching Characteristics RDS(ON) 13.5 Simple Drive Requirement ID 160mA G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistan... See More ⇒