AP3P7R0EM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP3P7R0EM
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 15.5 A
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 58 nS
Cossⓘ - Capacitancia de salida: 600 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
Paquete / Cubierta: SO8
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AP3P7R0EM Datasheet (PDF)
ap3p7r0em.pdf

AP3P7R0EMHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30VD Simple Drive Requirement RDS(ON) 7mG Ultra Low On-resistance ID3 -15.5A RoHS Compliant & Halogen-Free HBM ESD 2KVSDescriptionDDAP3P7R0E series are from Advanced Power innovated design andDDsilicon process technology t
ap3p7r0emt.pdf

AP3P7R0EMTHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30VD Simple Drive Requirement RDS(ON) 7m Fast Switching Characteristic ID -75AG RoHS Compliant & Halogen-Free HBM ESD 2KVSDDescriptionDDAP3P7R0E series are from Advanced Power innovated design andDsilicon process technolo
ap3p7r0eh.pdf

AP3P7R0EHHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30VD Simple Drive Requirement RDS(ON) 7mG Fast Switching Characteristic ID -75A RoHS Compliant & Halogen-Free HBM ESD 2KVSDescriptionAP3P7R0E series are from Advanced Power innovated design andsilicon process technology to achieve
ap3p7r0es.pdf

AP3P7R0ESHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30VD Simple Drive Requirement RDS(ON) 7mG Fast Switching Characteristic ID -75A RoHS Compliant & Halogen-Free HBM ESD 2KVSDescriptionAP3P7R0E series are from Advanced Power innovated design andsilicon process technology to achieve
Otros transistores... AP18P10GM , AP20T15GM , AP30T10GM , AP3N3R3M , AP3N4R5M , AP3P010M , AP3P028LM , AP3P050M , IRF1010E , AP3P9R0M , AP4024EM , AP4028EM , AP4034GM , AP4407GM , AP4423GM , AP4426GM , AP4438CGM .
History: IPP093N06N3G | SSPL2015 | SVF5N60D | HSP0139 | SSPS922NE | FTU04N65C | SSP60R190SFD2
History: IPP093N06N3G | SSPL2015 | SVF5N60D | HSP0139 | SSPS922NE | FTU04N65C | SSP60R190SFD2



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