AP3P7R0EM Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP3P7R0EM 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 15.5 A
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 58 nS
Cossⓘ - Capacitancia de salida: 600 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
Encapsulados: SO8
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AP3P7R0EM datasheet
ap3p7r0em.pdf
AP3P7R0EM Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30V D Simple Drive Requirement RDS(ON) 7m G Ultra Low On-resistance ID3 -15.5A RoHS Compliant & Halogen-Free HBM ESD 2KV S Description D D AP3P7R0E series are from Advanced Power innovated design and D D silicon process technology t
ap3p7r0emt.pdf
AP3P7R0EMT Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30V D Simple Drive Requirement RDS(ON) 7m Fast Switching Characteristic ID -75A G RoHS Compliant & Halogen-Free HBM ESD 2KV S D Description D D AP3P7R0E series are from Advanced Power innovated design and D silicon process technolo
ap3p7r0eh.pdf
AP3P7R0EH Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30V D Simple Drive Requirement RDS(ON) 7m G Fast Switching Characteristic ID -75A RoHS Compliant & Halogen-Free HBM ESD 2KV S Description AP3P7R0E series are from Advanced Power innovated design and silicon process technology to achieve
ap3p7r0es.pdf
AP3P7R0ES Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30V D Simple Drive Requirement RDS(ON) 7m G Fast Switching Characteristic ID -75A RoHS Compliant & Halogen-Free HBM ESD 2KV S Description AP3P7R0E series are from Advanced Power innovated design and silicon process technology to achieve
Otros transistores... AP18P10GM, AP20T15GM, AP30T10GM, AP3N3R3M, AP3N4R5M, AP3P010M, AP3P028LM, AP3P050M, IRF9540N, AP3P9R0M, AP4024EM, AP4028EM, AP4034GM, AP4407GM, AP4423GM, AP4426GM, AP4438CGM
History: WST2303A | IXTU4N60P | IXTQ22N50P | PDD3908 | IXTT50P085 | IXTV22N60PS | DTE043N04NA
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