All MOSFET. AP3P7R0EM Datasheet

 

AP3P7R0EM MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP3P7R0EM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Maximum Power Dissipation (Pd): 2.5 W
   Maximum Drain-Source Voltage |Vds|: 30 V
   Maximum Gate-Source Voltage |Vgs|: 25 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
   Maximum Drain Current |Id|: 15.5 A
   Total Gate Charge (Qg): 33 nC
   Rise Time (tr): 58 nS
   Drain-Source Capacitance (Cd): 600 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm
   Package: SO8

 AP3P7R0EM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP3P7R0EM Datasheet (PDF)

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 ap3p7r0em.pdf

AP3P7R0EM AP3P7R0EM

AP3P7R0EMHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30VD Simple Drive Requirement RDS(ON) 7mG Ultra Low On-resistance ID3 -15.5A RoHS Compliant & Halogen-Free HBM ESD 2KVSDescriptionDDAP3P7R0E series are from Advanced Power innovated design andDDsilicon process technology t

 0.1. Size:163K  ape
 ap3p7r0emt.pdf

AP3P7R0EM AP3P7R0EM

AP3P7R0EMTHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30VD Simple Drive Requirement RDS(ON) 7m Fast Switching Characteristic ID -75AG RoHS Compliant & Halogen-Free HBM ESD 2KVSDDescriptionDDAP3P7R0E series are from Advanced Power innovated design andDsilicon process technolo

 6.1. Size:205K  ape
 ap3p7r0eh.pdf

AP3P7R0EM AP3P7R0EM

AP3P7R0EHHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30VD Simple Drive Requirement RDS(ON) 7mG Fast Switching Characteristic ID -75A RoHS Compliant & Halogen-Free HBM ESD 2KVSDescriptionAP3P7R0E series are from Advanced Power innovated design andsilicon process technology to achieve

 6.2. Size:177K  ape
 ap3p7r0es.pdf

AP3P7R0EM AP3P7R0EM

AP3P7R0ESHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30VD Simple Drive Requirement RDS(ON) 7mG Fast Switching Characteristic ID -75A RoHS Compliant & Halogen-Free HBM ESD 2KVSDescriptionAP3P7R0E series are from Advanced Power innovated design andsilicon process technology to achieve

 6.3. Size:219K  ape
 ap3p7r0ei.pdf

AP3P7R0EM AP3P7R0EM

AP3P7R0EIHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30VD Simple Drive Requirement RDS(ON) 7mG Fast Switching Characteristic ID -54A RoHS Compliant & Halogen-Free HBM ESD 2KVSDescriptionAP3P7R0E series are from Advanced Power innovated design andsilicon process technology to achieve

 6.4. Size:67K  ape
 ap3p7r0ep.pdf

AP3P7R0EM AP3P7R0EM

AP3P7R0EPHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30VD Simple Drive Requirement RDS(ON) 7mG Fast Switching Characteristic ID -75A RoHS Compliant & Halogen-Free HBM ESD 2KVSDescriptionAP3P7R0E series are from Advanced Power innovated design andsilicon process technology to achieve

 6.5. Size:145K  ape
 ap3p7r0ejb.pdf

AP3P7R0EM AP3P7R0EM

AP3P7R0EJBHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30VD Simple Drive Requirement RDS(ON) 7mG Fast Switching Characteristic ID -75A RoHS Compliant & Halogen-Free HBM ESD 2KVSDescriptionAP3P7R0E series are from Advanced Power innovated design andsilicon process technology to achiev

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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