AP9408AGM Todos los transistores

 

AP9408AGM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9408AGM

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 12.5 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 190 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm

Encapsulados: SO8

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AP9408AGM datasheet

 ..1. Size:169K  ape
ap9408agm.pdf pdf_icon

AP9408AGM

AP9408AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D Simple Drive Requirement RDS(ON) 10m D D Fast Switching Characteristic ID 12.5A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP9408A series are fro

 0.1. Size:94K  ape
ap9408agm-hf.pdf pdf_icon

AP9408AGM

AP9408AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D Simple Drive Requirement RDS(ON) 10m D D Fast Switching Characteristic ID 12.5A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of

 6.1. Size:143K  ape
ap9408agh.pdf pdf_icon

AP9408AGM

AP9408AGH RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID 53A G S Description Advanced Power MOSFETs from APEC provide the G D S designer with the best combination of fast switching, TO-252(H) ruggedized device desi

 6.2. Size:145K  ape
ap9408agp.pdf pdf_icon

AP9408AGM

AP9408AGP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID 53A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance a

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