AP9408AGM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP9408AGM
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2.5 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 12.5 A
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 6.5 nC
Tiempo de subida (tr): 5 nS
Conductancia de drenaje-sustrato (Cd): 190 pF
Resistencia entre drenaje y fuente RDS(on): 0.01 Ohm
Paquete / Cubierta: SO8
Búsqueda de reemplazo de MOSFET AP9408AGM
AP9408AGM Datasheet (PDF)
ap9408agm.pdf
AP9408AGM-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDD Simple Drive Requirement RDS(ON) 10mDD Fast Switching Characteristic ID 12.5AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP9408A series are fro
ap9408agm-hf.pdf
AP9408AGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDD Simple Drive Requirement RDS(ON) 10mDD Fast Switching Characteristic ID 12.5AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of
ap9408agh.pdf
AP9408AGHRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID 53AGSDescriptionAdvanced Power MOSFETs from APEC provide the GDSdesigner with the best combination of fast switching,TO-252(H)ruggedized device desi
ap9408agp.pdf
AP9408AGPRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID 53AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance a
ap9408agi.pdf
AP9408AGIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Performance BVDSS 30VD Single Drive Requirement RDS(ON) 10m Full Isolation Package ID 53AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance
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