AP9408AGM
MOSFET. Datasheet pdf. Equivalent
Type Designator: AP9408AGM
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 12.5
A
Qgⓘ - Total Gate Charge: 6.5
nC
trⓘ - Rise Time: 5
nS
Cossⓘ -
Output Capacitance: 190
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01
Ohm
Package:
SO8
AP9408AGM
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP9408AGM
Datasheet (PDF)
..1. Size:169K ape
ap9408agm.pdf
AP9408AGM-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDD Simple Drive Requirement RDS(ON) 10mDD Fast Switching Characteristic ID 12.5AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP9408A series are fro
0.1. Size:94K ape
ap9408agm-hf.pdf
AP9408AGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDD Simple Drive Requirement RDS(ON) 10mDD Fast Switching Characteristic ID 12.5AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of
6.1. Size:143K ape
ap9408agh.pdf
AP9408AGHRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID 53AGSDescriptionAdvanced Power MOSFETs from APEC provide the GDSdesigner with the best combination of fast switching,TO-252(H)ruggedized device desi
6.2. Size:145K ape
ap9408agp.pdf
AP9408AGPRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID 53AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance a
6.3. Size:152K ape
ap9408agi.pdf
AP9408AGIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Performance BVDSS 30VD Single Drive Requirement RDS(ON) 10m Full Isolation Package ID 53AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance
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