AP9971AGM Todos los transistores

 

AP9971AGM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9971AGM

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 85 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm

Encapsulados: SO8

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AP9971AGM datasheet

 ..1. Size:166K  ape
ap9971agm.pdf pdf_icon

AP9971AGM

AP9971AGM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-resistance BVDSS 60V D2 D2 D1 Simple Drive Requirement RDS(ON) 50m D1 Surface Mount Package ID 5A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 Description AP9971A series are from A

 0.1. Size:95K  ape
ap9971agm-hf.pdf pdf_icon

AP9971AGM

AP9971AGM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-resistance BVDSS 60V D2 D2 D1 Single Drive Requirement RDS(ON) 50m D1 Surface Mount Package ID 5A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 Description Advanced Power MOSFETs from APEC provide the designer with D2 D1 the best combinat

 6.1. Size:197K  ape
ap9971agp ap9971ags.pdf pdf_icon

AP9971AGM

AP9971AGS/P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 36m Fast Switching Characteristic ID 22A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G TO-220(P) D ruggedized device design

 6.2. Size:168K  ape
ap9971agd.pdf pdf_icon

AP9971AGM

AP9971AGD RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D2 Low On-resistance BVDSS 60V D2 D1 Fast Switching Speed RDS(ON) 50m D1 PDIP-8 Package ID 5A G2 S2 PDIP-8 G1 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design,

Otros transistores... AP6C036M , AP6C072M , AP8N010LM , AP9926GM , AP9936GM , AP9938GEM , AP9960GM , AP9962AGM , 60N06 , AP9971GM , AP9975GM , AP9970GK , AP09T10GK , AP10TN135K , AP30T10GK , AP60WN4K9K , AP6N090K .

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