AP9971AGM MOSFET. Datasheet pdf. Equivalent
Type Designator: AP9971AGM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 5 A
Rise Time (tr): 12 nS
Drain-Source Capacitance (Cd): 85 pF
Maximum Drain-Source On-State Resistance (Rds): 0.05 Ohm
Package: SO8
AP9971AGM Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP9971AGM Datasheet (PDF)
1.1. ap9971agm-hf.pdf 
Size:95K _a-power
AP9971AGM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Ў Low On-resistance BVDSS 60V D2 D2 D1 Ў Single Drive Requirement RDS(ON) 50m? D1 Ў Surface Mount Package ID 5A G2 S2 Ў RoHS Compliant & Halogen-Free G1 S1 SO-8 Description Advanced Power MOSFETs from APEC provide the designer with D2 D1 the best combination of f
1.2. ap9971agm.pdf Size:166K _a-power
AP9971AGM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ Low On-resistance BVDSS 60V ▼ ▼ D2 ▼ D2 D1 ▼ Simple Drive Requirement RDS(ON) 50mΩ ▼ ▼ ▼ D1 ▼ Surface Mount Package ID 5A ▼ ▼ ▼ G2 S2 ▼ RoHS Compliant & Halogen-Free ▼ ▼ G1 ▼ S1 SO-8 Description AP9971A series are from A
2.1. ap9971agj.pdf Size:231K _a-power
AP9971AGH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Simple Drive Requirement BVDSS 60V Ў Lower On-resistance RDS(ON) 36m? Ў Fast Switching Characteristic ID 22A G S Description G Advanced Power MOSFETs from APEC provide the designer with D S TO-252(H) the best combination of fast switching, ruggedized device design, low
2.2. ap9971agh-hf ap9971agj-hf.pdf Size:96K _a-power
AP9971AGH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D ▼ Simple Drive Requirement BVDSS 60V ▼ Lower On-resistance RDS(ON) 36mΩ ▼ Fast Switching Characteristic ID 22A G ▼ Halogen Free & RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the designer with the G D S best combination of fast switchin
2.3. ap9971ags-hf.pdf Size:90K _a-power
AP9971AGS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D ▼ Simple Drive Requirement BVDSS 60V ▼ Lower On-resistance RDS(ON) 36mΩ ▼ Fast Switching Characteristic ID 22A G ▼ RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggediz
2.4. ap9971agh.pdf Size:231K _a-power
AP9971AGH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Simple Drive Requirement BVDSS 60V Ў Lower On-resistance RDS(ON) 36m? Ў Fast Switching Characteristic ID 22A G S Description G Advanced Power MOSFETs from APEC provide the designer with D S TO-252(H) the best combination of fast switching, ruggedized device design, low
2.5. ap9971agp.pdf Size:197K _a-power
AP9971AGS/P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Simple Drive Requirement BVDSS 60V Ў Lower On-resistance RDS(ON) 36m? Ў Fast Switching Characteristic ID 22A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G TO-220(P) D ruggedized device design, low o
2.6. ap9971agd.pdf Size:168K _a-power
AP9971AGD RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D2 Ў Low On-resistance BVDSS 60V D2 D1 Ў Fast Switching Speed RDS(ON) 50m? D1 Ў PDIP-8 Package ID 5A G2 S2 PDIP-8 G1 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra l
2.7. ap9971ags.pdf Size:197K _a-power
AP9971AGS/P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Simple Drive Requirement BVDSS 60V Ў Lower On-resistance RDS(ON) 36m? Ў Fast Switching Characteristic ID 22A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G TO-220(P) D ruggedized device design, low o
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