AP30T10GK Todos los transistores

 

AP30T10GK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP30T10GK
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.78 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.8 A

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6.5 nS
   Cossⓘ - Capacitancia de salida: 115 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
   Paquete / Cubierta: SOT223
 

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AP30T10GK Datasheet (PDF)

 ..1. Size:132K  ape
 ap30t10gk.pdf pdf_icon

AP30T10GK

AP30T10GK-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 55m Fast Switching Characteristic ID 4.8AG Halogen Free & RoHS Compliant ProductSDescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching

 0.1. Size:60K  ape
 ap30t10gk-hf.pdf pdf_icon

AP30T10GK

AP30T10GK-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 55m Fast Switching Characteristic ID 4.8AG Halogen Free & RoHS Compliant ProductSDescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching

 6.1. Size:59K  ape
 ap30t10gs-hf.pdf pdf_icon

AP30T10GK

AP30T10GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 55m Fast Switching Characteristic ID 19AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized

 6.2. Size:181K  ape
 ap30t10gm.pdf pdf_icon

AP30T10GK

AP30T10GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VDDD Lower Gate Charge RDS(ON) 55mD Fast Switching Characteristic ID3 4.5AGSS Halogen Free & RoHS CompliantSSO-8DDescriptionAP30T10 series are from Advanced Power innovated design andsilicon process techno

MOSTRAR MÁS

Otros transistores... AP9960GM , AP9962AGM , AP9971AGM , AP9971GM , AP9975GM , AP9970GK , AP09T10GK , AP10TN135K , IRF740 , AP60WN4K9K , AP6N090K , AP6N090LK , AP6P250K , AP04N20GK , APA2N70K , AP18P10GK , AP70SL1K4BK2 .

History: SM4831NAK | APT8024JFLL | STD4NK100Z | MXP5504CT | 2SJ450 | NTD65N03R-035 | JCS7N70R

 

 
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