AP30T10GK MOSFET Datasheet: N-Ch, 100V, 4.8A. Full specification with pinout and replacement list

AP30T10GK Specs and Replacement

Type Designator: AP30T10GK

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.8 A

Electrical Characteristics

tr ⓘ - Rise Time: 6.5 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: SOT223

AP30T10GK substitution

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AP30T10GK datasheet

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AP30T10GK-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 55m Fast Switching Characteristic ID 4.8A G Halogen Free & RoHS Compliant Product S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching... See More ⇒

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AP30T10GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 55m Fast Switching Characteristic ID 19A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized... See More ⇒

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AP30T10GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D D D Lower Gate Charge RDS(ON) 55m D Fast Switching Characteristic ID3 4.5A G S S Halogen Free & RoHS Compliant S SO-8 D Description AP30T10 series are from Advanced Power innovated design and silicon process techno... See More ⇒