Справочник MOSFET. AP30T10GK

 

AP30T10GK Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AP30T10GK
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 2.78 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4.8 A
   tr ⓘ - Время нарастания: 6.5 ns
   Cossⓘ - Выходная емкость: 115 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.055 Ohm
   Тип корпуса: SOT223
 

 Аналог (замена) для AP30T10GK

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP30T10GK Datasheet (PDF)

 ..1. Size:132K  ape
ap30t10gk.pdfpdf_icon

AP30T10GK

AP30T10GK-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 55m Fast Switching Characteristic ID 4.8AG Halogen Free & RoHS Compliant ProductSDescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching

 0.1. Size:60K  ape
ap30t10gk-hf.pdfpdf_icon

AP30T10GK

AP30T10GK-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 55m Fast Switching Characteristic ID 4.8AG Halogen Free & RoHS Compliant ProductSDescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching

 6.1. Size:59K  ape
ap30t10gs-hf.pdfpdf_icon

AP30T10GK

AP30T10GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 55m Fast Switching Characteristic ID 19AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized

 6.2. Size:181K  ape
ap30t10gm.pdfpdf_icon

AP30T10GK

AP30T10GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VDDD Lower Gate Charge RDS(ON) 55mD Fast Switching Characteristic ID3 4.5AGSS Halogen Free & RoHS CompliantSSO-8DDescriptionAP30T10 series are from Advanced Power innovated design andsilicon process techno

Другие MOSFET... AP9960GM , AP9962AGM , AP9971AGM , AP9971GM , AP9975GM , AP9970GK , AP09T10GK , AP10TN135K , IRF740 , AP60WN4K9K , AP6N090K , AP6N090LK , AP6P250K , AP04N20GK , APA2N70K , AP18P10GK , AP70SL1K4BK2 .

History: IPB70N04S4-06 | IRF5NJ6215

 

 
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