AP60WN4K9K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP60WN4K9K
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.78 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 19 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4.9 Ohm
Encapsulados: SOT223
Búsqueda de reemplazo de AP60WN4K9K MOSFET
- Selecciónⓘ de transistores por parámetros
AP60WN4K9K datasheet
ap60wn4k9k.pdf
AP60WN4K9K Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2A G RoHS Compliant & Halogen-Free S D Description S AP60WN4K9 series are from the innovated design and silicon D process technology to achieve the lowest possi
ap60wn4k9h.pdf
AP60WN4K9H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2A G RoHS Compliant & Halogen-Free S Description AP60WN4K9 series are from the innovated design and silicon G process technology to achieve the lowest possible on
ap60wn4k9i.pdf
AP60WN4K9I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2A G RoHS Compliant & Halogen-Free S Description AP60WN4K9 series are from the innovated design and silicon process technology to achieve the lowest possible on-re
ap60wn4k9j.pdf
AP60WN4K9J Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2A G RoHS Compliant & Halogen-Free S Description G AP60WN4K9 series are from the innovated design and silicon D S TO-251(J) process technology to achieve the l
Otros transistores... AP9962AGM , AP9971AGM , AP9971GM , AP9975GM , AP9970GK , AP09T10GK , AP10TN135K , AP30T10GK , IRF840 , AP6N090K , AP6N090LK , AP6P250K , AP04N20GK , APA2N70K , AP18P10GK , AP70SL1K4BK2 , AP10P500N .
History: STF12PF06 | AP6679BGJ-HF | AP6679GP-HF
History: STF12PF06 | AP6679BGJ-HF | AP6679GP-HF
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