AP60WN4K9K - Даташиты. Аналоги. Основные параметры
Наименование производителя: AP60WN4K9K
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 2.78 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 19 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 4.9 Ohm
Тип корпуса: SOT223
Аналог (замена) для AP60WN4K9K
AP60WN4K9K Datasheet (PDF)
ap60wn4k9k.pdf

AP60WN4K9KHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2AG RoHS Compliant & Halogen-FreeSDDescriptionSAP60WN4K9 series are from the innovated design and siliconDprocess technology to achieve the lowest possi
ap60wn4k9h.pdf

AP60WN4K9HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN4K9 series are from the innovated design and siliconGprocess technology to achieve the lowest possible on
ap60wn4k9i.pdf

AP60WN4K9IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN4K9 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-re
ap60wn4k9j.pdf

AP60WN4K9JHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2AG RoHS Compliant & Halogen-FreeSDescriptionGAP60WN4K9 series are from the innovated design and siliconDSTO-251(J)process technology to achieve the l
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History: AOC2806 | TK35E08N1 | SQM85N10-10 | HUFA76409D3ST | APT47N60BCFG | AP4537GYT-HF | IRFR15N20DTR
History: AOC2806 | TK35E08N1 | SQM85N10-10 | HUFA76409D3ST | APT47N60BCFG | AP4537GYT-HF | IRFR15N20DTR



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