AP60WN4K9K PDF and Equivalents Search

 

AP60WN4K9K Specs and Replacement

Type Designator: AP60WN4K9K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 19 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.9 Ohm

Package: SOT223

AP60WN4K9K substitution

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AP60WN4K9K datasheet

 ..1. Size:135K  ape
 ap60wn4k9k.pdf pdf_icon

AP60WN4K9K

AP60WN4K9K Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2A G RoHS Compliant & Halogen-Free S D Description S AP60WN4K9 series are from the innovated design and silicon D process technology to achieve the lowest possi... See More ⇒

 5.1. Size:198K  ape
 ap60wn4k9h.pdf pdf_icon

AP60WN4K9K

AP60WN4K9H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2A G RoHS Compliant & Halogen-Free S Description AP60WN4K9 series are from the innovated design and silicon G process technology to achieve the lowest possible on... See More ⇒

 5.2. Size:212K  ape
 ap60wn4k9i.pdf pdf_icon

AP60WN4K9K

AP60WN4K9I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2A G RoHS Compliant & Halogen-Free S Description AP60WN4K9 series are from the innovated design and silicon process technology to achieve the lowest possible on-re... See More ⇒

 5.3. Size:199K  ape
 ap60wn4k9j.pdf pdf_icon

AP60WN4K9K

AP60WN4K9J Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2A G RoHS Compliant & Halogen-Free S Description G AP60WN4K9 series are from the innovated design and silicon D S TO-251(J) process technology to achieve the l... See More ⇒

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Detailed specifications: AP9962AGM, AP9971AGM, AP9971GM, AP9975GM, AP9970GK, AP09T10GK, AP10TN135K, AP30T10GK, IRF840, AP6N090K, AP6N090LK, AP6P250K, AP04N20GK, APA2N70K, AP18P10GK, AP70SL1K4BK2, AP10P500N

Keywords - AP60WN4K9K MOSFET specs

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