AP10P500N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AP10P500NHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -100VD Small Package Outline RDS(ON) 0.5 Surface Mount Device ID - 1.2AS RoHS Compliant & Halogen-FreeSOT-23GDescription DAP10P500 series are from Advanced Power innovated design andsilicon process technology to achieve the

AP10P230HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -8.5AG RoHS Compliant & Halogen-FreeSDescriptionAP10P230 series are from Advanced Power innovated design and GDSsilicon process technology to achieve

AP10P10GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS -100V Lower Gate Charge RDS(ON) 500m Fast Switching Characteristic ID -5.7AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with the best GDScombination of fast switch

AP10P10GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -100V Lower Gate Charge RDS(ON) 500m Fast Switching Characteristic ID -5.7AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with the best GDScombination of fast switchi

AP10P10GK-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -100VD Lower Gate Charge RDS(ON) 500mS Fast Switching Characteristic ID - 1.65AD RoHS Compliant & Halogen-FreeSOT-223GDescriptionDAP10P10 series are from Advanced Power innovated design and siliconprocess technology

AP10P10GHwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET- 100 11.70.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-251 Power Switch

AP10P10D -100V P-Channel Enhancement Mode MOSFET Description The AP10P10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-10A DS DR

AP10P06MSI -60V P-Channel Enhancement Mode MOSFET Description The AP10N06MSI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-10A DS DR

AP10P04D -40V P-Channel Enhancement Mode MOSFET Description The AP10P04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-10A DS DR