AP10P500N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP10P500N
   Código: A12SS
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 10.5 nC
   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 35 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de MOSFET AP10P500N

AP10P500N Datasheet (PDF)

..1. Size:150K ape
ap10p500n.pdf

AP10P500NHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -100VD Small Package Outline RDS(ON) 0.5 Surface Mount Device ID - 1.2AS RoHS Compliant & Halogen-FreeSOT-23GDescription DAP10P500 series are from Advanced Power innovated design andsilicon process technology to achieve the

9.1. Size:204K ape
ap10p230h.pdf

AP10P230HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -8.5AG RoHS Compliant & Halogen-FreeSDescriptionAP10P230 series are from Advanced Power innovated design and GDSsilicon process technology to achieve

9.2. Size:101K ape
ap10p10gh j-hf.pdf

AP10P10GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS -100V Lower Gate Charge RDS(ON) 500m Fast Switching Characteristic ID -5.7AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with the best GDScombination of fast switch

9.3. Size:201K ape
ap10p10gj.pdf

AP10P10GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -100V Lower Gate Charge RDS(ON) 500m Fast Switching Characteristic ID -5.7AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with the best GDScombination of fast switchi

9.4. Size:54K ape
ap10p10gk-hf.pdf

AP10P10GK-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -100VD Lower Gate Charge RDS(ON) 500mS Fast Switching Characteristic ID - 1.65AD RoHS Compliant & Halogen-FreeSOT-223GDescriptionDAP10P10 series are from Advanced Power innovated design and siliconprocess technology

9.5. Size:858K cn vbsemi
ap10p10gh.pdf

AP10P10GHwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET- 100 11.70.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-251 Power Switch

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

Liste

Recientemente añadidas las descripciónes de los transistores: