AP10P500N Todos los transistores

 

AP10P500N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP10P500N
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 35 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
   Paquete / Cubierta: SOT23
 

 Búsqueda de reemplazo de AP10P500N MOSFET

   - Selección ⓘ de transistores por parámetros

 

AP10P500N Datasheet (PDF)

 ..1. Size:150K  ape
 ap10p500n.pdf pdf_icon

AP10P500N

AP10P500NHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -100VD Small Package Outline RDS(ON) 0.5 Surface Mount Device ID - 1.2AS RoHS Compliant & Halogen-FreeSOT-23GDescription DAP10P500 series are from Advanced Power innovated design andsilicon process technology to achieve the

 9.1. Size:204K  ape
 ap10p230h.pdf pdf_icon

AP10P500N

AP10P230HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -8.5AG RoHS Compliant & Halogen-FreeSDescriptionAP10P230 series are from Advanced Power innovated design and GDSsilicon process technology to achieve

 9.2. Size:101K  ape
 ap10p10gh j-hf.pdf pdf_icon

AP10P500N

AP10P10GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS -100V Lower Gate Charge RDS(ON) 500m Fast Switching Characteristic ID -5.7AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with the best GDScombination of fast switch

 9.3. Size:201K  ape
 ap10p10gj.pdf pdf_icon

AP10P500N

AP10P10GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -100V Lower Gate Charge RDS(ON) 500m Fast Switching Characteristic ID -5.7AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with the best GDScombination of fast switchi

MOSTRAR MÁS

Otros transistores... AP60WN4K9K , AP6N090K , AP6N090LK , AP6P250K , AP04N20GK , APA2N70K , AP18P10GK , AP70SL1K4BK2 , IRF1404 , AP10TN135N , AP2302AGN , AP2304AGN , AP2304GN , AP2306AGEN , AP2316GN , AP2323AGN , AP2323GN .

History: NTMFS5830NLT1G | VBE1638 | AUIRFSL8403 | PSMN5R0-100PS | HTJ600N06 | MMQ60R115PTH | PH6325L

 

 
Back to Top

 


 
.