All MOSFET. AP10P500N Datasheet

 

AP10P500N MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP10P500N
   Marking Code: A12SS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 1.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10.5 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: SOT23

 AP10P500N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP10P500N Datasheet (PDF)

 ..1. Size:150K  ape
 ap10p500n.pdf

AP10P500N AP10P500N

AP10P500NHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -100VD Small Package Outline RDS(ON) 0.5 Surface Mount Device ID - 1.2AS RoHS Compliant & Halogen-FreeSOT-23GDescription DAP10P500 series are from Advanced Power innovated design andsilicon process technology to achieve the

 9.1. Size:204K  ape
 ap10p230h.pdf

AP10P500N AP10P500N

AP10P230HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -8.5AG RoHS Compliant & Halogen-FreeSDescriptionAP10P230 series are from Advanced Power innovated design and GDSsilicon process technology to achieve

 9.2. Size:101K  ape
 ap10p10gh j-hf.pdf

AP10P500N AP10P500N

AP10P10GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS -100V Lower Gate Charge RDS(ON) 500m Fast Switching Characteristic ID -5.7AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with the best GDScombination of fast switch

 9.3. Size:201K  ape
 ap10p10gj.pdf

AP10P500N AP10P500N

AP10P10GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -100V Lower Gate Charge RDS(ON) 500m Fast Switching Characteristic ID -5.7AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with the best GDScombination of fast switchi

 9.4. Size:54K  ape
 ap10p10gk-hf.pdf

AP10P500N AP10P500N

AP10P10GK-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -100VD Lower Gate Charge RDS(ON) 500mS Fast Switching Characteristic ID - 1.65AD RoHS Compliant & Halogen-FreeSOT-223GDescriptionDAP10P10 series are from Advanced Power innovated design and siliconprocess technology

 9.5. Size:858K  cn vbsemi
 ap10p10gh.pdf

AP10P500N AP10P500N

AP10P10GHwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET- 100 11.70.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-251 Power Switch

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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