AP10P500N Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP10P500N
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 1.38 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 1.2 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 5 ns
Cossⓘ - Выходная емкость: 35 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.5 Ohm
Тип корпуса: SOT23
Аналог (замена) для AP10P500N
AP10P500N Datasheet (PDF)
ap10p500n.pdf

AP10P500NHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -100VD Small Package Outline RDS(ON) 0.5 Surface Mount Device ID - 1.2AS RoHS Compliant & Halogen-FreeSOT-23GDescription DAP10P500 series are from Advanced Power innovated design andsilicon process technology to achieve the
ap10p230h.pdf

AP10P230HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -8.5AG RoHS Compliant & Halogen-FreeSDescriptionAP10P230 series are from Advanced Power innovated design and GDSsilicon process technology to achieve
ap10p10gh j-hf.pdf

AP10P10GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS -100V Lower Gate Charge RDS(ON) 500m Fast Switching Characteristic ID -5.7AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with the best GDScombination of fast switch
ap10p10gj.pdf

AP10P10GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -100V Lower Gate Charge RDS(ON) 500m Fast Switching Characteristic ID -5.7AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with the best GDScombination of fast switchi
Другие MOSFET... AP60WN4K9K , AP6N090K , AP6N090LK , AP6P250K , AP04N20GK , APA2N70K , AP18P10GK , AP70SL1K4BK2 , IRF1404 , AP10TN135N , AP2302AGN , AP2304AGN , AP2304GN , AP2306AGEN , AP2316GN , AP2323AGN , AP2323GN .
History: MTP8P25 | HTM150A02 | NCE603583 | TSM3404CX | HGI080N10AL | FQD17P06TM | CSN03N2P2
History: MTP8P25 | HTM150A02 | NCE603583 | TSM3404CX | HGI080N10AL | FQD17P06TM | CSN03N2P2



Список транзисторов
Обновления
MOSFET: JMSL1010PU | JMSL1010PP | JMSL1010PKS | JMSL1010PK | JMSL1010PGS | JMSL1010PGQ | JMSL1010PGD | JMSL1010PG | JMSL1010PE | JMSL1010PC | JMSL1010AUQ | JMSL1010AU | JMSL1010AP | JMSL1010AKQ | JMSL1010AK | JMSL1010AGQ
Popular searches
2sd424 datasheet | 2sc536 datasheet | bd140 transistor equivalent | tip122 transistor equivalent | irfz44n equivalent | 2n2923 | 2n2102 | mj15003g