AP10TN135N Todos los transistores

 

AP10TN135N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP10TN135N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.135 Ohm
   Paquete / Cubierta: SOT23
 

 Búsqueda de reemplazo de AP10TN135N MOSFET

   - Selección ⓘ de transistores por parámetros

 

AP10TN135N Datasheet (PDF)

 ..1. Size:188K  ape
 ap10tn135n.pdf pdf_icon

AP10TN135N

AP10TN135NHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD Fast Switching Characteristic RDS(ON) 135m Low Gate Charge ID 3AS RoHS Compliant & Halogen-FreeSOT-23 GDescription DAP10TN135 series are from Advanced Power innovated designand silicon process technology to achieve the

 5.1. Size:201K  ape
 ap10tn135h.pdf pdf_icon

AP10TN135N

AP10TN135HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 135m Fast Switching Characteristic ID 8.1AG RoHS Compliant & Halogen-FreeSDescriptionGAP10TN135 series are from Advanced Power innovated design andDSTO-252(H)silicon process technology

 5.2. Size:222K  ape
 ap10tn135m.pdf pdf_icon

AP10TN135N

AP10TN135MHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VDD Fast Switching Characteristic D RDS(ON) 135mD Low Gate Charge ID 3AGS RoHS Compliant & Halogen-FreeSSSO-8Description DAP10TN135 series are from Advanced Power innovated designand silicon process technology t

 5.3. Size:166K  ape
 ap10tn135j.pdf pdf_icon

AP10TN135N

AP10TN135JHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 135m Fast Switching Characteristic ID 8.1AG RoHS Compliant & Halogen-FreeSDescriptionAP10TN135 series are from Advanced Power innovated design andGDSsilicon process technology to achieve

MOSTRAR MÁS

Otros transistores... AP6N090K , AP6N090LK , AP6P250K , AP04N20GK , APA2N70K , AP18P10GK , AP70SL1K4BK2 , AP10P500N , IRFP260N , AP2302AGN , AP2304AGN , AP2304GN , AP2306AGEN , AP2316GN , AP2323AGN , AP2323GN , AP2326GN .

History: AO3415 | PSMN5R0-100PS | CMRDM3590

 

 
Back to Top

 


 
.